Semiconductor device and semiconductor manufacturing method thereof

1 . A semiconductor manufacturing method, comprising:

forming a first semiconductor element with a first bonding film, wherein the first bonding film is formed on a first side of the first semiconductor element, the first semiconductor element and the first bonding film form a taper structure, the first bonding film forms a wide portion of the taper structure, the first semiconductor element forms a narrow portion of the taper structure, and the first semiconductor element and the first bonding film are etched in an identical etching process to form the taper structure;

forming a second semiconductor element with a second bonding film, wherein the second bonding film is formed on the second semiconductor element;

bonding the first semiconductor element and the second semiconductor element by bonding the first bonding film and the second bonding film; and

filling an oxide layer to surround the first semiconductor element and the first bonding film.

2 . The semiconductor manufacturing method according to claim 1 , wherein the step of forming the first semiconductor element with the first bonding film includes:

forming a photoresist film having a plurality of openings on a second side, opposite to the first side, of the first semiconductor element;

etching the first semiconductor element and the first bonding film by using the photoresist film as a mask; and

removing the photoresist film.

3 . The semiconductor manufacturing method according to claim 2 , wherein the first semiconductor element and the first bonding film are etched by a dry etching process.

4 . The semiconductor manufacturing method according to claim 2 , wherein the first semiconductor element and the first bonding film are etched by a wet etching process.

5 . The semiconductor manufacturing method according to claim 2 , wherein the first bonding film is etched after the first semiconductor element is etched.

6 . The semiconductor manufacturing method according to claim 2 , wherein a chip singulation process is performed by the step of etching the first semiconductor element and the first bonding film.

7 . A semiconductor manufacturing method, comprising:

forming a first semiconductor element with a first bonding film, wherein the first bonding film is formed on a first side of the first semiconductor element, a width of the first semiconductor element is less than that of the first bonding film, and the first semiconductor element and the first bonding film are etched in an identical etching process to form the taper structure;

forming a second semiconductor element with a second bonding film, wherein the second bonding film is formed on the second semiconductor element;

bonding the first semiconductor element and the second semiconductor element by bonding the first bonding film and the second bonding film; and

filling an oxide layer to surround the first semiconductor element and the first bonding film.

8 . The semiconductor manufacturing method according to claim 7 , wherein the step of forming the first semiconductor element with the first bonding film includes:

forming a photoresist film having a plurality of openings on a second side, opposite to the first side, of the first semiconductor element;

etching the first semiconductor element and the first bonding film by using the photoresist film as a mask; and

removing the photoresist film.

9 . The semiconductor manufacturing method according to claim 8 , wherein the first semiconductor element and the first bonding film are etched by a dry etching process.

10 . The semiconductor manufacturing method according to claim 8 , wherein the first semiconductor element and the first bonding film are etched by a wet etching process.

11 . The semiconductor manufacturing method according to claim 8 , wherein the first bonding film is etched after the first semiconductor element is etched.

12 . The semiconductor manufacturing method according to claim 8 , wherein a chip singulation process is performed by the step of etching the first semiconductor element and the first bonding film.

13 . The semiconductor manufacturing method according to claim 7 , wherein the first semiconductor element is a chip, and the second semiconductor element is a wafer.

14 . A semiconductor manufacturing method, comprising:

forming a first semiconductor element with a first bonding film, wherein the first bonding film is formed on a first side of the first semiconductor element, a width of the first semiconductor element is gradually increased towards the first bonding film, and the first semiconductor element and the first bonding film are etched in an identical etching process to form the taper structure;

forming a second semiconductor element with a second bonding film, wherein the second bonding film is formed on the second semiconductor element;

bonding the first semiconductor element and the second semiconductor element by bonding the first bonding film and the second bonding film; and

filling an oxide layer to surround the first semiconductor element and the first bonding film.

15 . The semiconductor manufacturing method according to claim 14 , wherein the step of forming the first semiconductor element with the first bonding film includes:

forming a photoresist film having a plurality of openings on a second side, opposite to the first side, of the first semiconductor element;

etching the first semiconductor element and the first bonding film by using the photoresist film as a mask; and

removing the photoresist film.

16 . The semiconductor manufacturing method according to claim 15 , wherein the first semiconductor element and the first bonding film are etched by a dry etching process.

17 . The semiconductor manufacturing method according to claim 15 , wherein the first semiconductor element and the first bonding film are etched by a wet etching process.

18 . The semiconductor manufacturing method according to claim 15 , wherein the first bonding film is etched after the first semiconductor element is etched.

19 . The semiconductor manufacturing method according to claim 15 , wherein a chip singulation process is performed by the step of etching the first semiconductor element and the first bonding film.

20 . The semiconductor manufacturing method according to claim 14 , wherein the first semiconductor element is a chip, and the second semiconductor element is a wafer.