IP Library Granted Patent US 12713863
Granted Patent B2
US 12713863 · App. 17/734,047 · Granted Aug 18, 2026

Substrate treatment apparatus and method

Inventors: Sang Young Kwon (Gyeonggi-do, KR); Ki Young Kwak (Gyeonggi-do, KR)
Assignee: SEMES CO., LTD.
H10P72/0414H10P70/20
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Quick Facts
Patent No.
US 12713863
App. No.
17/734,047
Granted
Aug 18, 2026
Kind
B2
Abstract

Provided are a substrate treatment apparatus and method for treating a substrate while preventing the surface of the substrate from drying out. The substrate treatment method includes: moving a first nozzle to above a first point on a substrate; ejecting a first substrate treatment liquid onto the substrate from the first nozzle; moving a second nozzle to above the first point; and ejecting a second substrate treatment liquid onto the substrate from the second nozzle, wherein the second nozzle is positioned above a second point on the substrate before moving to above the first point.

Claims (14)

1 . A substrate treatment method comprising:

moving a first nozzle to above a first point on a substrate, wherein the first nozzle and a second nozzle move respectively along first and second arcs, wherein the first arc has a different center than the second arc, wherein the first arc has a different radius length than the second arc, and wherein the first nozzle is configured to eject a first substrate treatment liquid and the second nozzle is configured to eject a second substrate treatment liquid;

once the first nozzle is directly above the first point, performing a spray ejection of the first substrate treatment liquid onto the substrate using the first nozzle, wherein the second nozzle is positioned directly above a second point on the substrate while the first nozzle is directly above the first point and performing said spray ejection, wherein the substate has an outermost periphery in a plan view while said spray ejection is performed, and wherein the second point is closer to the first point than to said outermost periphery;

after spray ejecting the first substrate treatment liquid from the first nozzle while the first nozzle is positioned directly above the first point, rotating the first nozzle in a first direction away from a central region of the substrate such that the first nozzle is no longer directly above the first point;

after spray ejecting the first substrate treatment liquid from the first nozzle while the first nozzle is positioned directly above the first point, rotating the second nozzle in a second direction to directly above the first point, wherein the second direction is opposite to the first direction in a plan view;

once the second nozzle is directly above the first point, performing a spray ejection of the second substrate treatment liquid onto the substrate while some amount of the first substrate treatment liquid is still on the substrate; and

wherein the method also comprises ejecting the first substrate treatment liquid from the first nozzle onto the substrate while performing the step of moving the first nozzle in the first direction or ejecting the second substrate treatment liquid from the second nozzle onto the substate while performing the step of moving the second nozzle in the second direction.

2 . The method of claim 1 , wherein the first nozzle and the second nozzle move at different heights from each other.

3 . The method of claim 1 , further comprising:

performing, by the second nozzle, leakage ejection of the second substrate treatment liquid onto the substrate while performing the step of moving the second nozzle in the second direction.

4 . The method of claim 1 , further comprising:

ejecting, after the second substrate treatment liquid has been ejected onto the substrate, deionized water onto the substrate from a third nozzle different from the first nozzle and the second nozzle, wherein the deionized water is ejected to rinse the substrate.

5 . The method of claim 1 , wherein:

the first substrate treatment liquid comprises hydrofluoric acid and the second substrate treatment liquid comprises ammonia water.