Substrate treating apparatus and substrate treating method

1 . A substrate treating apparatus comprising:

a support unit;

a heating unit comprising:

a body including an irradiation end, from which laser light is irradiated;

a shaft coupled to the body; and

a driver configured to supply power to the shaft,

a controller configured to control movement of the heating unit, wherein the controller moves the irradiation end of the heating unit to a target location on a substrate by adjusting a rotation angle of the heating unit and a rotation angle of the support unit,

wherein the target location includes an ideal target location, at which the target location is located when a center of the substrate and a center of the support unit coincide with each other, and an actual target location, at which the target location is located when the center of the substrate and the center of the support unit do not coincide with each other,

wherein the controller calculates an error value between the ideal target location and the actual target location, and

wherein the controller calculates a coordinate of the actual target location by applying the calculated error value to the actual target location.

2 . The substrate treating apparatus of claim 1 , wherein the controller derives an imaginary first circle, a radius of which is a distance between the center of the support unit and the calculated coordinate of the actual target location, and

wherein the controller calculates a first rotation locus of the imaginary first circle.

3 . The substrate treating apparatus of claim 2 , wherein the controller derives an imaginary second circle, a radius of which is a length of the body of the heating unit, and

wherein the controller calculates a second rotation locus of the imaginary second circle.

4 . The substrate treating apparatus of claim 3 , wherein the controller determines a point, at which the first rotation locus and the second rotation locus meet each other, as a final movement location.

5 . The substrate treating apparatus of claim 4 , wherein a point, at which a rotation angle of the heating unit is small, is determined as the final movement location when the first rotation locus and the second rotation locus meet each other at a plurality of points.

6 . The substrate treating apparatus of claim 3 , wherein the controller calculates a first rotation angle, by which the irradiation end is moved to the final movement location, and

wherein the controller swings the heating unit by the first rotation angle.

7 . The substrate treating apparatus of claim 6 , wherein the controller calculates a second rotation angle, by which the support unit is to be rotated, to move the actual target location formed on the substrate to the final movement location, and

wherein the controller rotates the support unit by the second rotation angle.

8 . The substrate treating apparatus of claim 7 , wherein the support unit is rotatable in the clockwise direction or the counterclockwise direction, and

wherein the second rotation angle is determined by an angle having a minimum vale according to a rotation direction of the support unit.

9 . The substrate treating apparatus of claim 1 , wherein a first pattern, and a second pattern formed at a location that is different from that of the first pattern are formed on the substrate, and

wherein the target location is a location of the second pattern.

10 . The substrate treating apparatus of claim 1 , wherein the heating unit further comprises a laser module including:

a beam expander configured to adjust a diameter of the laser light; and

a tilting member configured to tilt an irradiation direction of the laser light.

11 . The substrate treating apparatus of claim 1 , wherein the heating unit further comprises an optical module including a first reflection member and a second reflection member arranged such that an irradiation direction of the laser light, a photographing direction of an image acquiring member, and an irradiation direction of a lighting member are coaxial when viewed from above.

12 . The substrate treating apparatus of claim 1 , wherein the heating unit further comprises an image module including:

an image acquiring member configured to acquire an image of the substrate;

a lighting member; a first reflection plate; and

a second reflection plate configured to redirect light toward the substrate.

13 . The substrate treating apparatus of claim 1 , further comprising an error identifying unit positioned below a standby location of the irradiation end, the error identifying unit including a coordinate system having a preset target location and a height matched to a height of the substrate supported by the support unit.

14 . The substrate treating apparatus of claim 1 , wherein the support unit comprises a plurality of support pins each having a recessed region shaped to receive a corner of the substrate and to restrict lateral movement during rotation.

15 . The substrate treating apparatus of claim 1 , wherein the controller is configured to irradiate the laser light only to a second pattern formed on the substrate to accelerate etching of the second pattern relative to a first pattern.

16 . The substrate treating apparatus of claim 1 , wherein the driver comprises a linear motor configured to move the shaft in an upward or downward direction to adjust a height of the irradiation end.

17 . The substrate treating apparatus of claim 1 , wherein the controller operates the heating unit to irradiate the laser light while a chemical supplied to the substrate forms a liquid film or puddle covering an upper surface of the substrate.