Systems for integrated decomposition and scanning of a semiconducting wafer
Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.
1 . A system for decomposing and scanning a surface of a semiconducting wafer comprising:
a chamber body defining an interior region and a first aperture at a top portion of the chamber to receive a semiconducting wafer into the interior region of the chamber body;
a ledge projecting into the interior region at an intermediate portion of the chamber body between the top portion of the chamber body and a bottom portion of the chamber body, the ledge defining a second aperture within the interior region at the intermediate portion;
a wafer support configured to hold at least a portion of the semiconducting wafer, the wafer support positionable between at least a first position adjacent the first aperture and a second position adjacent the second aperture within the interior region of the chamber body;
a spray aperture formed in a sidewall of the chamber body between the first aperture and the second aperture, the spray aperture configured to receive a spray of a decomposition fluid from a spray device that extends no further than an inner periphery of the sidewall during spraying of the decomposition fluid, the decomposition fluid directed into the interior region of the chamber body when the wafer support is positioned at the second position; and
a scan arm coupled with a nozzle, at least a portion of the scan arm positioned exterior the chamber above the first aperture, the scan arm rotatable to position the nozzle adjacent the semiconducting wafer when the wafer support is positioned at the first position.
2 . The system of claim 1 , wherein the first aperture and the second aperture are coaxially arranged.
3 . The system of claim 1 , further comprising
a motor system operably coupled with the wafer support, the motor system configured to control a vertical position of the wafer support with respect to the chamber body at least to the first position for access to the semiconducting wafer by the nozzle and the second position for decomposition of a surface of the semiconducting wafer.
4 . The system of claim 3 , wherein the motor system is further configured to control the vertical position of the wafer support with respect to the chamber body to a third position between the second aperture and the bottom portion of the chamber body.
5 . The system of claim 4 , wherein the motor system is further configured to rotate the wafer support at the third position during at least one of a rinse procedure of the semiconducting wafer or a drying procedure of the semiconducting wafer.
6 . The system of claim 1 , wherein the chamber body defines one or more channels between an interior surface of the chamber body and the ledge, the one or more channels providing access to fluids between the first aperture and the second aperture.
7 . The system of claim 6 , further comprising one or more drains fluidically coupled with the one or more channels, the one or more drains providing an outlet for the fluids from the interior region of the chamber body.
8 . The system of claim 1 , further comprising
a gas outlet port beneath the second aperture within the interior region of the chamber body; and
a controller coupled to a gas source, the controller configured to introduce gas from the gas source to the gas outlet port during introduction of the decomposition fluid into the interior region of the chamber body when the wafer support is positioned at the second position.
9 . A system for decomposing and scanning a surface of a semiconducting wafer comprising:
a chamber configured to receive a semiconducting wafer, the chamber defining a first aperture at a top portion of the chamber to receive the semiconducting wafer into an interior region of the chamber, the chamber including
a ledge at an intermediate portion of the chamber between the top portion of the chamber and a bottom portion of the chamber, the ledge defining a second aperture at the intermediate portion,
a wafer support configured to hold at least a portion of the semiconducting wafer, the wafer support positionable between at least a first position adjacent the first aperture and a second position adjacent the second aperture,
a motor system operably coupled with the wafer support, the motor system configured to control a vertical position of the wafer support with respect to the chamber at least to the first position and the second position, and
a spray aperture formed in a sidewall of the chamber between the first aperture and the second aperture, the spray aperture configured to receive a spray of a decomposition fluid from a spray device that extends no further than an inner periphery of the sidewall during spraying of the decomposition fluid, the decomposition fluid directed into the interior region of the chamber when the wafer support is positioned at the second position by the motor system;
a lid positionable between an open position and a closed position, the lid having a size and shape to cover the first aperture when in the closed position; and
a scan arm coupled with a nozzle, at least a portion of the scan arm positioned exterior the chamber above the first aperture, the scan arm rotatable to position the nozzle adjacent the semiconducting wafer when the wafer support is positioned at the first position by the motor system and to position the nozzle outside a path of the lid from the open position to the closed position when the wafer support is positioned at the second position by the motor system.
10 . The system of claim 9 , wherein the lid is in the closed position when the wafer support is in the second position to prevent fluid passage through the first aperture.
11 . The system of claim 9 , wherein the lid is in the open position when the wafer support is in the first position to provide access to the semiconducting wafer by the nozzle.
12 . The system of claim 9 , further comprising a rinse trough having an elongated channel to receive the nozzle, the elongated channel configured to couple with a rinse fluid source to introduce a rinse fluid into the elongated channel to rinse the nozzle.
13 . The system of claim 12 , wherein the rinse trough includes a second elongated channel to receive the nozzle, the elongated channel configured to couple with a drying gas source to introduce a drying gas fluid into the elongated channel to dry the nozzle.
14 . The system of claim 9 , further comprising
a gas outlet port beneath the second aperture within the interior region of the chamber; and
a controller coupled to a gas source, the controller configured to introduce gas from the gas source to the gas outlet port during introduction of the decomposition fluid into the interior region of the chamber when the wafer support is positioned at the second position.
15 . The system of claim 9 , wherein the motor system is further configured to control the vertical position of the wafer support with respect to the chamber to a third position between the second aperture and the bottom portion of the chamber.
16 . The system of claim 15 , wherein the motor system is further configured to rotate the wafer support at the third position during at least one of a rinse procedure of the semiconducting wafer or a drying procedure of the semiconducting wafer.
17 . The system of claim 9 , wherein the motor system is further configured to rotate the wafer support at least one of at the first position and at the second position.
18 . The system of claim 9 , wherein the chamber defines one or more channels between an interior surface of the chamber and the ledge, the one or more channels providing access to fluids between the first aperture and the second aperture.
19 . The system of claim 18 , further comprising one or more drains fluidically coupled with the one or more channels, the one or more drains providing an outlet for the fluids from the interior region of the chamber.
20 . The system of claim 1 , wherein the nozzle includes
a nozzle body defining a fluid port in fluid communication with a nozzle port, the nozzle body configured to receive a fluid through the fluid port and direct the fluid through the nozzle port to introduce the fluid to the surface of the semiconducting wafer; and
a nozzle hood extending from the nozzle body adjacent the nozzle port and configured to translate longitudinally across the surface of the semiconducting wafer, the nozzle hood defining a channel disposed along a longitudinal portion of the nozzle hood at least partially between the nozzle port and an end of the longitudinal portion of the nozzle hood distal to the nozzle port, the nozzle hood configured to direct the fluid from the nozzle port towards the end of the longitudinal portion along the surface of the semiconducting wafer, wherein the channel is an elongated channel having opposing rounded ends defined by the nozzle hood, and the nozzle port is positioned tangent to an edge of a first rounded edge of the elongated channel.