Semiconductor device manufacturing method
A semiconductor device manufacturing method includes forming, on a substrate, a stacked body including a plurality of first films and a plurality of second films alternately stacked in a height direction; and forming a number (m×n) of holes through the stacked body that haves a number (m×n) of depths. The number (m) depths are arranged in a first direction intersecting the height direction and the number (n) depths are arranged in a second direction intersecting the height direction and the first direction. Further, the step of forming a number (m×n) of holes includes forming, on the stacked body, a mask member having a number (m) of heights in the first direction; and forming, in the stacked body, a number (m×n) of holes having number (m) depths in the first direction and number (n) depths based on the mask member.
1 . A semiconductor device manufacturing method, comprising:
forming, on a substrate, a stacked body including a plurality of first films and a plurality of second films alternately stacked in a height direction; and
forming a number (m×n) of holes through the stacked body that has a number (m×n) of depths, wherein the number (m) depths are arranged in a first direction intersecting the height direction and the number (n) depths are arranged in a second direction intersecting the height direction and the first direction, wherein
the step of forming a number (m×n) of holes includes:
forming, on the stacked body, a hard mask layer including a number (m×n) of through via holes,
forming, on the hard mask layer, a mask member having a number (m) of upper faces, wherein the upper faces have different heights arranged in the first direction, and wherein the mask member fills the number (m×n) of through via holes of the hard mask layer; and
forming, in the stacked body, a number (m×n) of holes having the number (m) depths arranged in the first direction using by etching the mask member filling the through via holes of the hard mask layer.
2 . The semiconductor device manufacturing method according to claim 1 , wherein the height of each of the upper faces of the mask member along the second direction is uniform.
3 . The semiconductor device manufacturing method according to claim 1 , wherein the mask member has two times or more of the number (m) heights in the first direction and the second direction.
4 . The semiconductor device manufacturing method according to claim 1 , wherein the mask member has a stepped structure with the number (m) of the upper surfaces arranged in the first direction.
5 . The semiconductor device manufacturing method according to claim 1 , wherein the mask member has a number (m×n) of columnar portions with different heights in the first direction.
6 . The semiconductor device manufacturing method according to claim 1 , wherein the mask member has a number (m×n) of holes with different depths in the first direction.
7 . The semiconductor device manufacturing method according to claim 1 , wherein the mask member is formed based on a nanoimprint lithographic method.
8 . The semiconductor device manufacturing method according to claim 1 , wherein the step of forming a number (m×n) of holes further includes
forming, on the hard mask layer, a second mask member that exposes a subset of the number (m×n) holes having the number (m) depths.
9 . The semiconductor device manufacturing method according to claim 8 , wherein the number (m×n) holes arranged as a plurality of rows in parallel with each other in the second direction, the step of forming a second mask member includes:
repeating step of exposing and covering of holes in units of 2( k−1 ) rows (k≥1) in the second direction starting from 2(k−1)+1 rows in the second direction.
10 . The semiconductor device manufacturing method according to claim 9 , further comprising repeating the step of exposing holes in units of 2( k−1 ) of the rows in the second direction k times, wherein k satisfies a condition, n≥2( k−1 ), where number (n) represents a total of the rows.
11 . The semiconductor device manufacturing method according to claim 1 , wherein an etching resistance of the mask member is lower than an etching resistance of the hard mask layer.
12 . The semiconductor device manufacturing method according to claim 1 , further comprising forming a conductive member layer in interiors of the number (m×n) holes.
13 . The semiconductor device manufacturing method according to claim 1 , wherein an upper face of the stacked body is uniform.
14 . The semiconductor device manufacturing method according to claim 1 , wherein the number (m) and the number (n) are different.
15 . The semiconductor device manufacturing method according to claim 2 , wherein the through via holes of the hard mask layer arranged in the second direction and one of the upper faces of the mask member along the second direction overlaps each other viewed from the height direction.