Semiconductor structure with enhanced voltage stress control and method of forming the same

1 . A method, comprising:

accessing a first cell, the first cell including:

a first active region and a second active region extending in a first direction in a first layer;

gate electrodes extending in a second direction in a second layer over the first layer;

first conductive lines extending in the second direction in the second layer and arranged alternatively with the gate electrodes over the first active region;

second conductive lines extending in the second direction in the second layer and arranged alternatively with the gate electrodes over the second active region;

a third and a fourth conductive lines extending in the first direction in a third layer over the second layer, wherein the third conductive line is overlapped with the first active region and the fourth conductive line is non-overlapped with the first active region, respectively; and

first gate vias arranged in a fourth layer between the second layer and the third layer, wherein the first gate vias overlapping the third conductive line and each of the first gate vias electrically coupled to a corresponding one of the gate electrodes;

determining a performance metric and a dielectric voltage stress level; and

in response to the performance metric or the dielectric voltage stress level failing to fulfilling a specification, revising the first cell to generate a second cell by moving at least one of the first gate vias to be electrically coupled to the fourth conductive line.

2 . The method of claim 1 , wherein the first cell further comprises a first power rail and a second power rail extending in the first direction in the third layer, wherein the first conductive lines are electrically coupled to the first power rail, and the second conductive lines are electrically coupled to the second power rail.

3 . The method of claim 2 , wherein the first power rail is coupled to a first supply voltage, and the second power rail is electrically coupled to a second supply voltage.

4 . The method of claim 2 , wherein the generating of the second cell further comprises:

arranging a fifth conductive line extending in the first direction in the third layer and parallel to the third and fourth conductive lines, wherein a distance between the first power rail and the fifth conductive line measured in the second direction is less than a distance between the second power rail and the fifth conductive line measured in the second direction; and

arranging at least one drain via in the fourth layer and electrically coupled to the fifth conductive line.

5 . The method of claim 4 , wherein the generating of the second cell comprises arranging only one drain via to couple to the fifth conductive line, wherein the only one drain via and the first conductive lines are coupled to a same voltage level.

6 . The method of claim 4 , wherein the generating of the second cell further comprises:

arranging a sixth conductive line extending in the first direction in the third layer and parallel to the third and fourth conductive lines, wherein a distance between the first power rail and the sixth conductive line measured in the second direction is less than a distance between the second power rail and the sixth conductive line measured in the second direction; and

arranging a second gate via in the fourth layer and electrically coupled to the sixth conductive line.

7 . The method of claim 6 , wherein the second gate via is between the first power rail and the at least one drain via.

8 . The method of claim 1 , wherein the generating of the second cell further comprises:

arranging a seventh conductive line extending in the first direction in the third layer and parallel to the third and fourth conductive lines, wherein the seventh conductive line is between the first active region and the second active region from a top-view perspective; and

arranging third gate vias in the fourth layer and electrically coupling the seventh conductive line to a corresponding one of the gate electrodes.

9 . The method of claim 8 , wherein the seventh conductive line is coupled to ground.

10 . The method of claim 1 , wherein the first active region is a P-type active region, and the second active region is an N-type active region.

11 . A method, comprising:

accessing a cell according to an electronic circuit, the cell comprising:

a first active region and a second active region extending in a first direction in a first layer;

gate electrodes extending in a second direction in a second layer over the first layer;

first conductive lines extending in the second direction in the second layer and arranged alternatively with the gate electrodes over the first active region, the first conductive lines electrically coupled to a first supply voltage; and

second conductive lines extending in the second direction in the second layer and aligned with the respective first conductive lines over the second active region, the second conductive lines electrically coupled to a second supply voltage; and

in an attempt to meet a specification of performance metrics, arranging the cell by:

arranging a third conductive line extending in the first direction in a third layer over the second layer, the third conductive line overlapping the second conductive lines and electrically coupled to the second supply voltage;

arranging first gate vias in a fourth layer between the second layer and the third layer, wherein the first gate vias overlap the third conductive line and each of the first gate vias is electrically coupled to a corresponding one of the gate electrodes; and

arranging second gate vias in the fourth layer in a space between the first conductive lines and the second conductive lines from a top-view perspective.

12 . The method of claim 11 , wherein the first supply voltage is a positive voltage, and the second supply voltage is substantially zero volts or a negative voltage.

13 . The method of claim 11 , wherein the arranging of the cell further comprises:

arranging a fourth conductive line extending in the first direction in the third layer, wherein a distance between a first power rail and the fourth conductive line measured in the second direction is less than a distance between a second power rail and the fourth conductive line measured in the second direction; and

arranging a first drain via on the fourth conductive line and overlapped with the fourth conductive line, the fourth conductive line being free from any other drain via coupled thereto.

14 . The method of claim 13 , wherein the arranging of the cell further comprises:

arranging a fifth conductive line extending in the first direction in the third layer and parallel to the fourth conductive line, wherein the fifth conductive line is coupled to the first supply voltage and the second gate vias are electrically coupled to the second supply voltage.

15 . The method of claim 14 , wherein the arranging of the cell further comprises forming a first opening in the fifth conductive line, the first opening aligned with the first drain via in the second direction.

16 . The method of claim 15 , wherein the cell further comprises:

a sixth conductive line extending in the first direction in the third layer on a side of the fourth conductive line opposite to the fifth conductive line, wherein the method further comprising forming a second opening disposed in the sixth conductive line and aligned with the first drain via in the second direction.

17 . A method, comprising:

accessing a first cell, the first cell including:

a first active region and a second active region extending in a first direction in a first layer;

gate electrodes extending in a second direction in a second layer over the first layer;

first conductive lines extending in the second direction in the second layer and arranged alternatively with the gate electrodes over the first active region;

second conductive lines extending in the second direction in the second layer and arranged alternatively with the gate electrodes over the second active region;

a third and a fourth conductive lines extending in the first direction in a third layer over the second layer, wherein the third conductive line is overlapped with the first active region; and

first gate vias arranged in a fourth layer between the second layer and the third layer, wherein the first gate vias overlapping the third conductive line and each of the first gate vias electrically coupled to a corresponding one of the gate electrodes;

determining a performance metric and a dielectric voltage stress level; and

in response to the performance metric or the dielectric voltage stress level failing to fulfilling a specification, revising the first cell to generate a second cell by:

arranging the first gate vias to be coupled to the fourth conductive line in a space between the first conductive lines and the second conductive lines.

18 . The method of claim 17 , wherein the generating of the second cell further comprises:

arranging a first power rail and a second power rail on an upper side and a lower side, respectively, of the cell in the third layer and configured to supply a first supply voltage and a second supply voltage, respectively; and

arranging a fifth conductive line extending in the first direction in the third layer and immediately adjacent to the fourth conductive line,

wherein the first and second supply voltages are fixed-valued voltages, and the fourth conductive line is configured to receive a time-varying signal representing a sequence of digital data.

19 . The method of claim 17 , wherein the generating of the second cell further comprises:

arranging a sixth conductive line extending in the first direction in the third layer and overlapping the first active region; and

arranging a second gate via electrically coupled to the sixth conductive line, wherein the sixth conductive line is free from any other gate via coupled thereto.

20 . The method of claim 17 , wherein the generating of the second cell further comprises:

arranging a drain via on a seven conductive line extending in the first direction in the third layer; and

causing an eight conductive line immediately adjacent to the seven conductive line to be electrically floating or removed from the second cell.