Semiconductor device including interconnect structure with metal jump structure connecting adjacent metal lines
Provided is a semiconductor device which includes: a base layer; a 1 st metal line extended in a 1 st direction on the base layer; a 2 nd metal line extended in the 1 st direction, and adjacent to the 1 st metal line at a same level, on the base layer; and a metal jumper, between the 1 st metal line and the 2 nd metal line, at the same level, wherein the metal jumper connects the 1 st metal line and the 2 nd metal line.
1 . A semiconductor device comprising:
a base layer;
a 1 st metal line extending in a 1 st direction on the base layer;
a 2 nd metal line extending in the 1 st direction, and adjacent to the 1 st metal line in a 2 nd direction intersecting the 1 st direction, at a same level as the 1 st metal line in a 3rd direction intersecting the 1 st direction and the 2 nd direction, on the base layer;
a metal jumper, between the 1 st metal line and the 2 nd metal line, at the same level; and
a 1 st contact liner between the metal jumper and at least one of the 1 st metal line and the 2 nd metal line,
wherein the metal jumper electrically connects the 1 st metal line and the 2 nd metal line.
2 . The semiconductor device of claim 1 , wherein the metal jumper has a smaller length than the 1 st metal line or the 2 nd metal line in the 1 st direction.
3 . The semiconductor device of claim 1 , wherein the 1 st contact liner extends to a bottom surface of the metal jumper.
4 . The semiconductor device of claim 1 , wherein the contact liner comprises titanium nitride.
5 . The semiconductor device of claim 1 , further comprising a 2 nd contact liner between the base layer and a bottom surface of the 1 st metal line or the 2 nd metal line.
6 . The semiconductor device of claim 1 , wherein top surfaces of the 1 st metal line, the metal jumper, and the 2 nd metal line are horizontally coplanar or aligned in the 2 nd direction.
7 . The semiconductor device of claim 1 , wherein the 1 st metal line, the 2 nd metal line, and the metal jumper have the same material composition.
8 . The semiconductor device of claim 1 , wherein a bottom surface of the metal jumper is at a level above a bottom surface of the 1 st metal line or the 2 nd metal line in the 3 rd direction.
9 . The semiconductor device of claim 1 , wherein the metal jumper has a material composition different from that of the 1 st metal line and the 2 nd metal line.
10 . The semiconductor device of claim 9 , wherein the 1 st metal line and the 2 nd metal line comprise ruthenium (Ru).
11 . A method of manufacturing a semiconductor device, the method comprising:
etching an initial metal structure to form a 1 st metal line and a 2 nd metal line extending in a 1 st direction and adjacent in a 2 nd direction intersecting the 1 st direction, at a same level;
forming a dielectric layer between the 1 st metal line and the 2 nd metal line;
forming a hard mask layer with an opening exposing the dielectric layer between the 1 st metal line and the 2 nd metal line;
forming a recess in the dielectric layer between the 1 st metal line and the 2 nd metal line exposing a side surface of the 1 st metal line and a side surface of the 2 nd metal line, the recess having a smaller length than the 1 st metal line or the 2 nd metal line in the 1 st direction; and
forming a metal jumper in the recess such that the metal jumper electrically connects the 1 st metal line and the 2 nd metal line.
12 . The method of claim 11 , further comprising forming a contact liner in the recess,
wherein the metal jumper is connected to the 1 st metal line and the 2 nd metal line through the contact liner.
13 . The method of claim 12 , wherein the contact liner comprises titanium nitride.
14 . The method of claim 13 , wherein the metal jumper has a material composition different from that of the 1 st metal line and the 2 nd metal line.