Fly-over metal jumper connection
An interconnect device has a first layer with a first metal line, a second metal line, and a third metal line, a second layer with a metal jumper and a metal via. The metal jumper is electrically connected to the first metal line and the second metal line. The metal via is electrically connected to the second metal line, and the metal jumper and the metal via are electrically isolated. The interconnect device further includes a third layer with a fourth metal line. The metal jumper is electrically isolated from the third metal line by a first dielectric region between the metal jumper and the third metal line.
1 . An interconnect structure comprising:
a first layer with a first metal line, a second metal line, and a third metal line;
a second layer with a metal jumper and a metal via,
wherein the metal jumper is electrically connected to the first metal line and the second metal line,
wherein the metal via is electrically connected to the second metal line, and wherein the metal jumper and the metal via are electrically isolated; and
a third layer with a fourth metal line above the jumper and the via, wherein the metal jumper is electrically isolated from the third metal line by a first dielectric region between the metal jumper and the third metal line.
2 . The structure of claim 1 ,
wherein the metal jumper is formed in a lower portion of a first recess, and
wherein a semiconductor material physically isolates the metal jumper from the second metal layer.
3 . The structure of claim 1 , wherein the jumper extends below the top of the first metal line and the second metal line.
4 . The structure of claim 1 ,
wherein the metal jumper and the metal via are formed in the deposition process, and
wherein the metal jumper is partially etched away.
5 . The structure of claim 1 , wherein the metal jumper and the metal via are formed using a block mask deposition process.
6 . The structure of claim 1 , wherein the metal jumper is formed after a sacrificial dielectric deposition layer is fill a metal via recess.
7 . The structure of claim 1 , wherein the metal via is deposited with a process selected from a group consisting of: single damascene, and dual damascene.