Microchannel structures with buried structures

1 . A microchannel structure comprising:

a plate layer formed of a first material; and

a plurality of heatsink structures vertically extending from the plate layer, each of the plurality of heatsink structures comprising:

a bottom structure disposed on the plate layer and formed of the first material;

a buried structure disposed on the bottom structure and formed of a second material, wherein the second material has etching selectivity with respect to the first material; and

a top structure disposed on the buried structure and formed of the first material, wherein a plurality of microchannels are formed between the plurality of heatsink structures, and wherein the first material comprises silicon.

2 . The microchannel structure of claim 1 , wherein one of a depth, a width, or a shape of the plurality of microchannels is substantially uniform across the plurality of microchannels.

3 . The microchannel structure of claim 1 , wherein one of a depth, a width, or a shape of the plurality of heatsink structures is substantially uniform across the plurality of heatsink structures.

4 . The microchannel structure of claim 1 , wherein the buried structure is disposed at a first distance from the plate layer.

5 . The microchannel structure of claim 4 , wherein the first distance ranges from 50 μm to 200 μm.

6 . The microchannel structure of claim 4 , wherein the first distance is smaller than 50 μm.

7 . A structure comprising:

a plate layer formed of a first material; and

a plurality of heatsink structures vertically extending from the plate layer and formed of the first material, each of the plurality of heatsink structures comprising a buried structure disposed therein at a first distance from the plate layer, the buried structure formed of a second material, wherein the second material has etching selectivity with respect to the first material;

wherein a plurality of microchannels are uniformly disposed between the plurality of heatsink structures, and wherein the first material comprises silicon.

8 . The structure of claim 7 , wherein:

the first distance ranges from 50 μm to 200 μm, and the second material comprises one of silicon dioxide, silicon nitride, silicon carbide, or gallium oxide; or

the first distance is smaller than 50 μm, and the second material comprises metal.

9 . The structure of claim 7 , comprising a thermal interface material disposed above each of the plurality of heatsink structures.

10 . The structure of claim 7 , wherein a height of the plurality of heatsink structures ranges from 500 μm to 800 μm.

11 . The structure of claim 7 ,

wherein a width of the plurality of heatsink structures ranges from 30 μm to 70 μm, and

wherein a pitch of the plurality of heatsink structures ranges from 70 μm to 130 μm.

12 . The structure of claim 7 , wherein a thickness of the buried structure ranges from 0.5 μm to 3 μm.

13 . A structure comprising:

a plate layer formed of a first material;

a buried layer disposed on the plate layer and formed of a second material, wherein the second material has etching selectivity with respect to the first material;

a top layer disposed on the buried layer and formed of the first material; and

a plurality of microchannels formed by etching of a portion of the plate layer, a portion of the buried layer, or a portion of the top layer,

wherein one of a depth, a width, or a shape of the plurality of microchannels is substantially uniform across the plurality of microchannels, and wherein the first material comprises silicon.

14 . The structure of claim 13 ,

wherein the second material comprises one of silicon dioxide, silicon nitride, silicon carbide, gallium oxide, or metal.

15 . The structure of claim 13 , wherein the etching of a portion of the plate layer comprises first etching to etch the portion of the top layer and second etching to etch the portion of the plate layer.