Microfluidic channels for cooling hybrid bonded interfaces
A semiconductor device with a hybrid bonded interface having microfluidic channels is provided. The semiconductor device includes a first die comprising a first passivation layer, wherein the first passivation layer includes one or more first trenches, and a second die comprising a second passivation layer, wherein the second passivation layer includes one or more second trenches. The first die is bonded to the second die via hybrid copper-to-copper bonding, wherein the one or more first trenches and the one or more second trenches form one or more channels.
1 . An apparatus comprising:
a die comprising an active device;
one or more interconnects coupled to the active device; and
a passivation layer disposed in areas between adjacent interconnects of the one or more interconnects;
wherein the passivation layer includes one or more trenches, each trench of the one or more trenches respectively formed between at least two adjacent interconnects of the one or more interconnects, and longitudinally coextensive with the at least two adjacent interconnects of the one or more interconnects, the one or more trenches being positioned inside bonding interfaces to form one or more channels and sharing a hybrid-copper-to-copper bonding interface, the hybrid copper-to-copper bonding interface comprising an interface in which copper elements are bonded via a copper to copper bonding process.
2 . The apparatus of claim 1 , wherein the passivation layer comprises a silicon-based dielectric material.
3 . The apparatus of claim 1 , wherein the one or more trenches is filled with a buffer material, wherein the buffer material is configured to be removed from the one or more trenches after the die has been bonded to another die or substrate.
4 . The apparatus of claim 3 , wherein the buffer material comprises a polymer material.
5 . The apparatus of claim 1 , wherein the one or more interconnects are configured to form an array of interconnects configured to be bonded via hybrid copper-to-copper bonding to another die or substrate.
6 . The apparatus of claim 1 , wherein the one or more interconnects comprises one or more of a conductive wire, trace, or pad.
7 . The apparatus of claim 1 , wherein the one or more trenches comprises a first set of trenches extending longitudinally in a first direction.
8 . The apparatus of claim 7 , wherein the one or more trenches comprises a second set of trenches extending longitudinally in a second direction different from the first direction, wherein the first set of trenches and second set of trenches together form a grid of trenches in the passivation layer.
9 . An apparatus comprising:
a die comprising an active device comprising a first bonding interface at a first region and a bonding interface at a second region;
one or more interconnects coupled to the active device; and
a passivation layer disposed in areas between adjacent interconnects of the one or more interconnects;
a hybrid bonded interface comprising a first region and a second region, the first region being provided for a copper-to-copper interface, the second region being provided for a dielectric-to-dielectric interface;
wherein the passivation layer includes one or more trenches, each trench of the one or more trenches respectively formed between at least two adjacent interconnects of the one or more interconnects, and longitudinally coextensive with the at least two adjacent interconnects of the one or more interconnects, the one or more trenches being positioned inside bonding interfaces to form one or more channels.