Semiconductor device and method of forming EMI shielding material in two-step process using light sintering
A semiconductor device has a substrate and encapsulant deposited over the substrate. An electrical connector is disposed over the substrate outside the encapsulant. An antenna can be formed over the substrate. A first shielding material is disposed over a portion of the encapsulant without covering the electrical connector with the first shielding material. The first shielding material is disposed over the portion of the encapsulant and the portion of the substrate using a direct jet printer. A light source emitting an ultraviolet light or intense pulsed light is directed at the first shielding material to induce sintering. A cover is disposed over the electrical connector. A second shielding material is disposed over the encapsulant to prevent the second shielding material from reaching the electrical connector. The second shielding material overlaps the first shielding material and covers a side surface of the encapsulant and a side surface of the substrate.
1 . A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical connector over the first surface of the substrate;
depositing an encapsulant over a first surface of the substrate, wherein the
electrical connector is disposed outside the encapsulant;
disposing a first shielding material over a portion of the encapsulant without covering the electrical connector with the first shielding material;
directing a light source at the first shielding material to induce sintering;
disposing a cover over the electrical connector; and
disposing a second shielding material over the encapsulant, wherein the cover prevents the second shielding material from reaching the electrical connector.
2 . The method of claim 1 , further including disposing an electrical component over the substrate.
3 . The method of claim 1 , further including forming an antenna over a second surface of the substrate opposite the first surface of the substrate.
4 . The method of claim 1 , wherein the first shielding material covers the portion of the encapsulant and a portion of the substrate while maintaining separation from the electrical connector.
5 . The method of claim 1 , further including directing an ultraviolet light or intense pulsed light at the first shielding material to induce sintering.
6 . The method of claim 1 , further including disposing a material over the first shielding material prior to directing the light source at the first shielding material.
7 . A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical connector over a first surface of the substrate;
disposing a first shielding material over a portion of the substrate a distance from the electrical connector;
directing a light source at the first shielding material to induce sintering;
disposing a cover over the electrical connector; and
disposing a second shielding material over the substrate, wherein the cover prevents the second shielding material from reaching the electrical connector.
8 . The method of claim 7 , further including:
disposing an electrical component over the substrate; and
depositing an encapsulant over the electrical component and substrate.
9 . The method of claim 7 , further including forming an antenna over a second surface of the substrate opposite the first surface of the substrate.
10 . The method of claim 7 , wherein the second shielding material overlaps the first shielding material.
11 . The method of claim 7 , wherein the first shielding material covers the portion of the substrate without covering the electrical connector with the first shielding material.
12 . The method of claim 11 , further including directing an ultraviolet light or intense pulsed light at the first shielding material to induce sintering.
13 . The method of claim 7 , further including disposing a material over the first shielding material prior to directing the light source at the first shielding material.
14 . A method of making a semiconductor device, comprising:
providing a substrate;
disposing an electrical connector over the first surface of the substrate;
depositing an encapsulant over a first surface of the substrate, wherein the
electrical connector is disposed outside the encapsulant;
disposing a first shielding material over a portion of the encapsulant without covering the electrical connector with the first shielding material;
disposing a cover over the electrical connector; and
disposing a second shielding material disposed over the encapsulant.
15 . The method of claim 14 , further including electrical component over the substrate.
16 . The method of claim 14 , further including disposing an antenna over a second surface of the substrate opposite the first surface of the substrate.
17 . The method of claim 14 , further including covering the portion of the encapsulant and a portion of the substrate with the first shielding material while maintaining separation from the electrical connector.
18 . The method of claim 14 , further including directing a light source at the first shielding material to induce sintering.
19 . The method of claim 14 , further including disposing a material over the first shielding material.
20 . A method of making a semiconductor device, comprising:
providing a substrate;
electrical connector over the substrate;
disposing a first shielding material over a portion of the substrate a distance from the electrical connector;
directing a light source at the first shielding material to induce sintering;
disposing a cover over the electrical connector; and
disposing a second shielding material disposed over the substrate.
21 . The method of claim 20 , further including:
disposing an electrical component over the substrate; and
depositing an encapsulant over the electrical component and substrate.
22 . The method of claim 20 , further including disposing an antenna over the substrate.
23 . The method of claim 20 , further including overlapping the first shielding material with the second shielding material.
24 . The method of claim 20 , further including covering the portion of the substrate with the first shielding material without covering the electrical connector with the first shielding material.