IP Library › Granted Patent US 12,713,940
Granted Patent B2
US 12,713,940 · App. 17/870,560 · Granted Aug 18, 2026

Power semiconductor device attached to a lead frame

Inventors: Matthew Lloyd Anthony (Nijmegen, NL); Ricardo Lagmay Yandoc (Nijmegen, NL); Manoj Balakrishnan (Nijmegen, NL); Adam Richard Brown (Nijmegen, NL)
Assignee: Nexperia B.V.
H10W70/466H10W70/481H10W72/30H10W72/60H10W74/00H10W72/07636H10W90/766
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Quick Facts
Patent No.
US 12,713,940
App. No.
17/870,560
Granted
Aug 18, 2026
Kind
B2
Abstract

A semiconductor device is provided that includes a lead frame, a die attached to the lead frame using a first solder, a clip attached to the die using a second solder, and a copper slug attached to the clip. First gull wing leads are attached to the leadframe for a drain connection of the semiconductor device. Second gull wing leads are attached to the clip for a gate connection and for a source connection of the semiconductor device.

Claims (26)

1 . A semiconductor device comprising:

a lead frame;

a die attached to the lead frame using a first solder;

a clip attached to the die using a second solder;

a copper slug attached to the clip, wherein the copper slug has an exposed face that forms an exposed source pad at a bottom surface of the semiconductor device; and

an exposed drain pad exposed through moulding at a top surface of the semiconductor device,

wherein the lead frame has first gull wing leads attached for a drain connection of the semiconductor device.

2 . The semiconductor device as claimed in claim 1 , wherein the clip and the copper slug are stamped from a single piece of copper.

3 . The semiconductor device as claimed in claim 2 , wherein the clip has second gull wing leads attached for a gate connection and for a source connection of the semiconductor device.

4 . The semiconductor device as claimed in claim 2 , wherein the semiconductor device comprises the exposed source pad which is attached to a PCB.

5 . The semiconductor device as claimed in claim 2 , wherein the semiconductor device is a power MOS semiconductor device.

6 . The semiconductor device as claimed in claim 1 , wherein the clip has second gull wing leads attached for a gate connection and for a source connection of the semiconductor device.

7 . The semiconductor device as claimed in claim 6 , wherein the semiconductor device is a power MOS semiconductor device.

8 . The semiconductor device as claimed in claim 6 , wherein the semiconductor device comprises the exposed source pad which is attached to a PCB.

9 . The semiconductor device as claimed in claim 1 , wherein the semiconductor device comprises the exposed source pad which is attached to a PCB.

10 . The semiconductor device as claimed in claim 9 , wherein the semiconductor device is a power MOS semiconductor device.

11 . The semiconductor device as claimed in claim 1 , wherein the semiconductor device is a power MOS semiconductor device.

12 . A method of producing a semiconductor device, the method comprising the steps of:

stencil printing of a solder on a leadframe matrix;

attaching a die to the leadframe;

stencil printing of a solder to the die;

attaching a clip to the die, which clip forms a top pad;

providing a moulding of the leadframe in a book mold press to form a package;

polishing through the top of the package wherein a top drain is exposed; and

singulation of the package wherein gull-wing leads are formed.

13 . The method of producing a semiconductor device as claimed in claim 12 , wherein an ultrasonic welding (USW) is used to make a dual gauge clip.