Via array in a redistribution layer structure for stress relief
One aspect of the present disclosure pertains to an integrated (IC) structure. The IC structure includes a semiconductor substrate; an interconnect structure formed over the substrate; and a redistribution layer (RDL) structure formed over the interconnect structure. The RDL structure includes: a RDL pad portion having a pad via array with multiple vias landing on a first top metal line of the interconnect structure; a RDL signal routing portion having a signal routing via landing on a second top metal line of the interconnect structure; and a RDL top portion over the RDL pad portion and the RDL signal routing portion. The multiple vias of the pad via array include a block via and an adjacent sacrificial via, the block via having a block via width, the sacrificial via having a sacrificial via width, and the block via width is greater than the sacrificial via width.
1 . An integrated circuit (IC) structure, comprising:
a semiconductor substrate;
an interconnect structure formed over the substrate; and
a redistribution layer (RDL) structure formed over the interconnect structure, wherein the RDL structure includes:
a RDL pad portion having a pad via array with multiple vias landing on a first top metal line of the interconnect structure;
a RDL signal routing portion having a signal routing via landing on a second top metal line of the interconnect structure; and
a RDL top portion over the RDL pad portion and the RDL signal routing portion, the RDL top portion connecting the RDL pad portion and the RDL signal routing portion together,
wherein the multiple vias of the pad via array include a center block via surrounded by adjacent sacrificial vias, the block via having a block via width along a first direction and a block via length along a second direction different from the first direction, the sacrificial vias having a sacrificial via width along the first direction and a sacrificial via length along the second direction, wherein the block via width is greater than the sacrificial via width and the block via length is greater than the sacrificial via length,
wherein the sacrificial via is spaced closer to the block via than the signal routing via.
2 . The IC structure of claim 1 , wherein a ratio of the block via width to the sacrificial via width is greater than 10.
3 . The IC structure of claim 1 , wherein the RDL pad portion and the RDL signal routing portion are connected together through a connecting portion of the RDL top portion, and the connecting portion is directly above an interlayer dielectric (ILD) layer of the interconnect structure.
4 . The IC structure of claim 3 , wherein the connecting portion of the RDL top portion has a line length along the first direction, and the line length is greater than 3 times the sacrificial via width.
5 . The IC structure of claim 4 , wherein the line length is greater than a via spacing between the block via and the sacrificial via.
6 . The IC structure of claim 5 , wherein a ratio of the line length to the via spacing is greater than 5.
7 . The IC structure of claim 3 ,
wherein the RDL top portion directly over the first top metal line has a RDL pad area, the RDL pad area has a pad width along the first direction and a same pad width along a second direction perpendicular to the first direction,
wherein the connecting portion of the RDL top portion has a RDL connecting area, the RDL connecting area has a line length along the first direction and a line width along the second direction,
wherein the pad width is greater than the line width.
8 . The IC structure of claim 7 ,
wherein a ratio of the pad width to the line width is in a range between 7 to 35.
9 . The IC structure of claim 1 , wherein the block via is surrounded by one layer of sacrificial vias on each side of the block via, wherein each sacrificial via of the layer of sacrificial vias are spaced apart from each other by a passivation layer.
10 . The IC structure of claim 1 ,
wherein the block via is surrounded by one layer of sacrificial vias on a first and a second side of the block via, the block via is surrounded by two layers of sacrificial vias on a third side of the block via, and the block via is not surrounded by any layers of sacrificial vias on a fourth side of the block via, wherein the two layers of the sacrificial vias are disposed between the block via and the signal routing via,
wherein each sacrificial via is spaced apart from each other by a passivation layer.
11 . An integrated circuit (IC) structure, comprising:
a semiconductor substrate;
an interconnect structure formed over the substrate; and
a redistribution layer (RDL) structure formed over the interconnect structure, wherein the RDL structure includes:
a RDL pad portion having a pad via array with multiple vias landing on a first top metal line of the interconnect structure;
a RDL signal routing portion having a signal routing via landing on a second top metal line of the interconnect structure; and
a RDL top portion over the RDL pad portion and the RDL signal routing portion, the RDL top portion connecting the RDL pad portion and the RDL signal routing portion together,
wherein the multiple vias of the pad via array includes perimeter vias disposed along edges of the RDL pad portion and a center block via surrounded by the perimeter vias, wherein the center block via has a larger surface area than each of the perimeter vias,
wherein each of the perimeter vias are spaced closer to another one of the perimeter vias than to the signal routing via.
12 . The IC structure of claim 11 , wherein the RDL pad portion and the RDL signal routing portion are connected together through a connecting portion of the RDL top portion, and the connecting portion is directly above an interlayer dielectric (ILD) layer of the interconnect structure.
13 . The IC structure of claim 12 ,
wherein the RDL top portion directly over the first top metal line has a RDL pad area, the RDL pad area has a pad width along a first direction and a same pad width along a second direction perpendicular to the first direction,
wherein the connecting portion of the RDL top portion has a RDL connecting area, the RDL connecting area has a line length along the first direction and a line width along the second direction,
wherein the pad width is greater than the line width by at least 7 times.
14 . The IC structure of claim 11 , wherein the perimeter vias have substantially the same size.
15 . The IC structure of claim 11 , wherein a spacing between adjacent perimeter vias and between the perimeter vias and the center block via is substantially the same.
16 . The IC structure of claim 11 , wherein the perimeter vias include nucleated voids absorbed from the center block via.
17 . An integrated circuit (IC) structure, comprising:
a semiconductor substrate;
an interconnect structure formed over the substrate; and
a redistribution layer (RDL) structure formed over the interconnect structure, wherein the RDL structure includes:
a RDL pad portion having a pad via array with multiple vias landing on a first top metal line of the interconnect structure, wherein the multiple vias include multiple smaller perimeter vias surrounding a bigger center via;
a RDL signal routing portion having a signal routing via landing on a second top metal line of the interconnect structure; and
a RDL top portion over the RDL pad portion and the RDL signal routing portion, the RDL top portion connecting the RDL pad portion and the RDL signal routing portion together,
wherein the first top metal line has a first length along a first direction, the second top metal line has a second length along the first direction, and the first length is greater than the second length,
wherein the first top metal line has a bottom surface free of contact from any metal features, and the second top metal line has a bottom surface in direct contact with a metal via routing to a semiconductor device of the substrate.
18 . The IC structure of claim 17 , further comprising a bonding pad landing on and directly above the RDL pad portion of the RDL structure.
19 . The IC structure of claim 17 , further comprising a passivation layer surrounding the RDL structure, wherein the RDL structure includes copper, and the passivation layer includes a dielectric material.
20 . The IC structure of claim 19 , further comprising a conductive barrier layer lining bottom and side surfaces of each of the multiple vias in the pad via array and the signal routing via, wherein the conductive barrier layer includes tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), or a combination thereof.