Semiconductor device and method of making redistribution layers with intensive pulsed light irradiation

1 . A method of making a semiconductor device, comprising:

providing a substrate;

disposing an electrical component over the substrate;

depositing an encapsulant over the electrical component;

forming a conductive layer over the substrate opposite the electrical component after depositing the encapsulant, wherein the conductive layer is deposited as a plurality of graphene-coated metal balls in a matrix;

sintering the conductive layer by intensive pulsed light (IPL) irradiation;

forming an insulating layer over the conductive layer; and

forming a second conductive layer over the insulating layer, wherein the second conductive layer is deposited as a second plurality of graphene-coated metal balls in a second matrix.

2 . The method of claim 1 , wherein the plurality of graphene-coated metal balls comprises a plurality of cores formed from copper or silver, and each of the plurality of cores includes a graphene coating.

3 . The method of claim 1 , further including depositing the conductive layer by jet printing.

4 . The method of claim 1 , further including sintering the second conductive layer by IPL irradiation.

5 . A method of making a semiconductor device, comprising:

providing a substrate;

disposing an electrical component over the substrate;

depositing an encapsulant over the electrical component;

forming a conductive layer over the substrate opposite the electrical component, wherein the conductive layer includes a plurality of graphene-coated metal balls;

sintering the conductive layer by intensive pulsed light (IPL) irradiation;

forming an insulating layer over the conductive layer; and

forming a second conductive layer over the insulating layer, wherein the second conductive layer includes a plurality of graphene-coated metal balls.

6 . The method of claim 5 , wherein the plurality of graphene-coated metal balls comprises a plurality of cores formed from copper or silver, and each of the plurality of cores includes a graphene coating.

7 . The method of claim 5 , further including depositing the conductive layer by jet printing.

8 . The method of claim 5 , further including sintering the second conductive layer by IPL irradiation.

9 . The method of claim 8 , further including:

forming a second insulating layer over the second conductive layer;

forming a third conductive layer over the second insulating layer; and

sintering the third conductive layer by IPL irradiation.

10 . A method of making a semiconductor device, comprising:

providing a substrate;

disposing an electrical component over the substrate;

depositing an encapsulant over the electrical component;

forming a conductive layer over the substrate opposite the electrical component, wherein the conductive layer includes a plurality of graphene-coated metal balls;

forming an insulating layer over the conductive layer; and

forming a second conductive layer over the insulating layer, wherein the second conductive layer includes a second plurality of graphene-coated metal balls.

11 . The method of claim 10 , further including:

forming a second insulating layer formed over the second conductive layer; and

forming a third conductive layer over the second insulating layer, wherein the third conductive layer includes a third plurality of graphene-coated metal balls.

12 . The method of claim 10 , wherein each one of the plurality of graphene-coated metal balls includes a copper core.

13 . The method of claim 10 , wherein each one of the plurality of graphene-coated metal balls includes a silver core.

14 . The method of claim 10 , wherein a first portion of the plurality of graphene coated metal balls includes copper cores and a second portion of the plurality of graphene-coated metal balls includes silver cores.