Packaging systems and methods for semiconductor devices
The present invention is directed to semiconductor devices and manufacturing methods thereof. In a specific embodiment, the present invention provides a semiconductor device that includes a filling material that supports the sides of an integrated circuit, which is coupled to a surface of a semiconductor substrate and surround by a ring structure. A portion of the filling material is positioned between the integrated circuit and the semiconductor substrate. There are other embodiments as well.
1 . A semiconductor device comprising:
a substrate comprising a first top surface and a first bottom surface, the first top surface comprising a first plurality of electrical contacts;
a first plurality of electrical connections directly coupled to the first plurality of electrical contacts;
a circuit comprising a second top surface and a second bottom surface, the second bottom surface comprising a second plurality of electrical contacts, the second plurality of electrical contacts being directly coupled to the first plurality of electrical connections, the circuit further comprising a first side surface and a second side surface;
a ring structure coupled to the substrate and positioned around the circuit, the ring structure comprising a third top surface, a height difference between the second top surface and the third top surface being less than 100 μm; and
a filling material comprising a first portion and a second portion, the first portion being directly coupled to the first plurality of electrical connections and the second bottom surface, the second portion being in direct contact with the first side surface, the filling material being positioned between the circuit and the ring structure, the filling material being thermally conductive and comprising a thermosetting epoxy resin, a top region of the second portion being characterized by a width of at least 15 μm and a distance of less than 50 μm from the second top surface of the circuit to provide structural support for the circuit.
2 . The semiconductor device of claim 1 , further comprising a second plurality of electrical connections directly coupled to the first bottom surface.
3 . The semiconductor device of claim 1 , wherein:
the second portion comprises a third side surface and a fourth side surface;
the third side surface is in direct contact with the first side surface; and
the fourth side surface is in direct contact with the ring structure.
4 . The semiconductor device of claim 3 , wherein, the height difference is no greater than 50 um.
5 . The semiconductor device of claim 3 , wherein the ring structure is coupled to the substrate using a glue material, an adhesive material, and/or a thermoset epoxy material.
6 . The semiconductor device of claim 5 , wherein the ring structure comprises a solder mask material, a copper material, a stainless steel material, a kovar material, a copper tungsten material, a metal alloy material, and/or a ceramic material.
7 . The semiconductor device of claim 5 , wherein a fifth side surface is at least 20 um below the second top surface.
8 . The semiconductor device of claim 7 , wherein the circuit is characterized by a first height, the fifth side surface being at least one-eighth of the first height below the second top surface.
9 . The semiconductor device of claim 1 , wherein the ring structure is characterized by a square shape, a rectangular shape, or a circular shape.
10 . The semiconductor device of claim 1 , wherein the first bottom surface comprises a second plurality of electrical contacts, the first plurality of electrical contacts being coupled to the second plurality of electrical contacts.
11 . The semiconductor device of claim 1 , wherein the ring structure is coupled to the substrate using an epoxy material or an adhesive material.
12 . The semiconductor device of claim 1 , wherein the filling material comprises an epoxy material.
13 . The semiconductor device of claim 1 , wherein the filling material comprises an adhesive material.
14 . The semiconductor device of claim 1 , wherein the filling material comprises a resin material.
15 . The semiconductor device of claim 1 , wherein the second portion comprises a third side surface, the third side surface is characterized by a curved profile.
16 . The semiconductor device of claim 1 , wherein the first plurality of electrical connections comprises a solder material.
17 . A semiconductor device comprising:
a substrate comprising a first top surface and a first bottom surface, the first top surface comprising a first plurality of electrical contacts, the first bottom surface comprising a second plurality of electrical contacts, the substrate further comprising a ring structure;
a first plurality of electrical connections directly coupled to the first plurality of electrical contacts, the first plurality of electrical connections being positioned within the ring structure;
a second plurality of electrical connections directly coupled to the second plurality of electrical contacts;
a circuit comprising a second top surface and a second bottom surface, the second bottom surface comprising a second plurality of electrical contacts, the second plurality of electrical contacts being directly coupled to the first plurality of electrical connections, the circuit further comprising a first side surface and a second side surface; and
a filling material comprising a first portion and a second portion, the first portion being directly coupled to the first plurality of electrical connections and the second bottom surface, the second portion being in direct contact with the first side surface and the ring structure, the filling material being thermally conductive and comprising a thermosetting epoxy resin, a top region of the second portion being characterized by a width of at least 15 μm and a distance of less than 50 μm from the second top surface of the circuit to provide structural support for the circuit.
18 . The semiconductor device of claim 17 , wherein the second plurality of electrical connections comprises a ball grid array.
19 . A semiconductor device comprising:
a substrate comprising a first top surface and a first bottom surface, the first top surface comprising a first plurality of electrical contacts, the first bottom surface comprising a second plurality of electrical contacts;
a ring structure positioned on a first location of the first top surface;
a first plurality of electrical connections directly coupled to the first plurality of electrical contacts, the first plurality of electrical connections being positioned within the ring structure;
a circuit comprising a second top surface and a second bottom surface, the second bottom surface comprising a second plurality of electrical contacts, the second plurality of electrical contacts being directly coupled to the first plurality of electrical connections, the circuit further comprising a first side surface and a second side surface; and
a filling material comprising a first portion and a second portion, the first portion being directly coupled to the first plurality of electrical connections and the second bottom surface, the second portion being in direct contact with the first side surface and the ring structure, the filling material being thermally conductive and comprising a thermosetting epoxy resin, a top region of the second portion being characterized by a width of at least 15 μm and a distance of less than 50 μm from the second top surface of the circuit to provide structural support for the circuit.
20 . The semiconductor device of claim 19 , wherein the filling material comprises a third portion positioned w the circuit and the ring structure.