Semiconductor packages including interface members for welding
An example semiconductor package includes a semiconductor die. In addition, the semiconductor package includes a mold compound having a first side, a second side opposite the first side, and an axis extending between the first side and the second side, the mold compound covering the semiconductor die. Further, the semiconductor package includes an interface member including a first portion and a second portion, the first portion is coupled to the second portion. The first portion is positioned along the first side, the second portion is positioned along the second side, and an engagement of a welding horn with the first portion is adapted to weld the second portion to a surface.
1 . A semiconductor device, comprising:
a semiconductor die;
a mold compound having a first side and a second side opposite the first side, the mold compound covering the semiconductor die; and
an interface member including a first portion and a second portion, the first portion is coupled to the second portion, the first portion is on the first side, the second portion is on the second side, the semiconductor die is on the second portion, and the second portion including a metallic material and having a surface facing away from the semiconductor die, and the surface is configured to melt responsive to a vibration.
2 . The semiconductor device of claim 1 , wherein the interface member has a connection portion coupled to and extending between the first portion and the second portion.
3 . The semiconductor device of claim 2 , wherein the first portion, the second portion, and the connection portion form a monolithic body.
4 . The semiconductor device of claim 2 , wherein the connection portion extends through the mold compound.
5 . The semiconductor device of claim 2 , wherein the connection portion are external to the mold compound.
6 . The semiconductor device of claim 1 , wherein the first portion covers the first side of the mold compound and the second portion covers the second side of the mold compound.
7 . The semiconductor device of claim 1 , wherein the second portion includes a pattern of projections.
8 . The semiconductor device of claim 1 , wherein the semiconductor die includes a force sensor.
9 . The semiconductor device of claim 1 , wherein the first portion is directly above the semiconductor die.
10 . The semiconductor device of claim 1 , wherein the second portion includes a set of protrusions extending away from the semiconductor die.
11 . A semiconductor device, comprising:
a semiconductor die including a force sensor;
a mold compound having a first side and a second side opposite the first side, the mold compound covering the semiconductor die;
a first mounting pad on the first side and external to the molding compound, the first mounting pad having a first surface facing away from the semiconductor die and configured to melt responsive to a vibration; and
a second mounting pad on the second side and external to the molding compound, the second mounting pad having a second surface facing away from the semiconductor die and configured to melt responsive to a vibration.
12 . The semiconductor device of claim 11 , wherein the semiconductor die is mounted to a die pad, and the first and second mounting pads are coupled to i the die pad.
13 . The semiconductor device of claim 12 , wherein the first and second mounting pads and the die pad form a monolithic body.
14 . The semiconductor device of claim 12 , wherein the first and second mounting pads and the die pad are part of a lead frame.
15 . The semiconductor device of claim 11 , wherein the first and second mounting pads are deformable by a welding device, or include recesses to engage with the welding device.
16 . The semiconductor device of claim 11 , wherein the first and second mounting pads are deformable by a welding device, or include recesses to engage with the welding device.
17 . A semiconductor device, comprising:
a semiconductor die including a force sensor;
a die pad having opposite first and second surfaces, the semiconductor die mounted on the first surface; and
an interface member, at least a portion of the interface member is on the second surface, and the portion has a surface facing away from the die pad, and the surface is configured to melt responsive to a vibration.
18 . The semiconductor device of claim 17 , wherein the portion is a first portion, the interface member includes a second portion over the semiconductor die, and a connection portion extending between the first portion and the second portion, the connection portion configured to conduct the vibration from the second portion to the first portion.
19 . The semiconductor device of claim 18 , wherein the first portion, the second portion, and the connection portion form a monolithic body.
20 . The semiconductor device of claim 18 , comprising a mold compound covering the semiconductor die.
21 . The semiconductor device of claim 20 , wherein the connection portion extends through the mold compound.
22 . The semiconductor device of claim 20 , wherein the connection portion extends along an outer perimeter of the mold compound.
23 . The semiconductor device of claim 17 , wherein the portion includes a set of protrusions extending away from the semiconductor die.