Semiconductor device
A semiconductor device includes: a die; a mold material layer in which the die is embedded in a state where an electrode surface of the die is exposed from a surface of the mold material layer; and a redistribution layer provided on a surface of the mold material layer and having an insulating layer and a wiring in a multilayer state, as a fan out wafer level package. The semiconductor device further has a reinforcing structure made of a material harder than the insulating layer, on the insulating layer of the redistribution layer. The reinforcing structure is located between the wiring and a surface of the mold material layer. The reinforcing structure is at a position corresponding to a boundary region between the die and the mold material layer.
1 . A semiconductor device comprising:
a die;
a mold material layer in which the die is embedded in a state where an electrode surface of the die is exposed from a surface of the mold material layer; and
a redistribution layer provided on a surface of the mold material layer and having an insulating layer and a wiring in a multilayer state, as a fan out wafer level package, wherein
the semiconductor device further has a reinforcing structure made of a material harder than the insulating layer, on the insulating layer of the redistribution layer,
the reinforcing structure is located between the wiring and a surface of the mold material layer, and
the reinforcing structure is positioned to be aligned with a boundary line, wherein the boundary line is between the die and the mold material layer, wherein the reinforcing structure is formed by partially increasing a thickness of the wiring, wherein
the redistribution layer includes a ground plane for noise suppression,
the reinforcing structure is made of the ground plane whose thickness is partially increased at a position corresponding to a boundary region of the wiring between the die and the mold material layer, and
a surface of the reinforcing structure opposite to the wiring is not electrically connected with another wiring.
2 . The semiconductor device according to claim 1 , wherein the reinforcing structure has a via inside the redistribution layer.
3 . The semiconductor device according to claim 1 , wherein the reinforcing structure is located at a position separated from a surface of the mold material layer via an insulating layer in the redistribution layer.
4 . The semiconductor device according to claim 1 , wherein the reinforcing structure is provided at a part of the wiring arranged in the redistribution layer so as to intersect the boundary line between the die and the mold material layer.
5 . The semiconductor device according to claim 1 , wherein the reinforcing structure is provided not entirely along the boundary line but only on a part of the wiring arranged to straddle the boundary line.