μ-LED, μ-LED device, display and method for the same
Disclosed are various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
1 . An optoelectronic device, comprising:
a layer stack comprising an active region and at least one structured semiconductor layer;
wherein the at least one structured semiconductor layer comprises a photonic structure, the photonic structure comprising recesses etched into the at least one structured semiconductor layer having a first periodicity in a first direction and a second periodicity, different than the first periodicity, in a second direction different than the first direction,
wherein the first periodicity in the first direction generates a first optical bandgap in the first direction within the at least one structured semiconductor layer and the second periodicity in the second direction generates a second optical bandgap in the second direction within the at least one structured semiconductor layer,
wherein the first optical bandgap is different from the second optical bandgap; and
a converter material arranged in the recesses of the photonic structure and configured to emit, when excited by an incident excitation radiation, converted radiation,
wherein the two optical bandgaps generated by the first and second periodicities cause the converted radiation to emit substantially perpendicular from a surface of the at least one structured semiconductor layer.
2 . The optoelectronic device according to claim 1 ,
wherein the structured semiconductor layer comprises a plurality of recesses, wherein the converter material is located in the plurality of recesses.
3 . The optoelectronic device according to claim 1 ,
wherein the converter material comprises an average thickness of at least 500 nm.
4 . The optoelectronic device according to claim 1 ,
wherein the structured semiconductor layer is configured such that the directed beam of rays is emitted perpendicularly to a plane, wherein the structured semiconductor layer is arranged.
5 . The optoelectronic device according to claim 1 ,
wherein an optical filter element is arranged at least on one side of the structured semiconductor layer.
6 . A μ-LED arrangement comprising a μ-LED and having the optoelectronic device according to claim 1 , wherein the μ-LED is adapted to irradiate an excitation radiation into the converter material.
7 . The μ-LED arrangement according to claim 6 ,
wherein the structured semiconductor layer is part of a semiconductor substrate of the μ-LED.
8 . The μ-LED arrangement according to claim 7 ,
wherein the structured semiconductor layer is formed in the semiconductor substrate of the μ-LED.
9 . The μ-LED arrangement according to claim 7 ,
wherein the structured semiconductor layer with the converter material is configured in such a way that the converted radiation is emitted into the emission region perpendicular to a plane of the semiconductor substrate.
10 . The μ-LED arrangement according to claim 6 ,
wherein the structure of the light-shaping structure is at least partially disposed in an active layer of the μ-LED.
11 . A method for producing the optoelectronic device according to claim 1 , comprising:
forming the structured semiconductor layer by at least one etching step in a semiconductor substrate of a μ-LED.
12 . The method according to claim 11 , comprising:
at least partially filling selected recesses in the structured semiconductor layer with the converter material.