Semiconductor device including joint portion between conductive connection structures and method of fabricating the same
In an embodiment, a method of fabricating a semiconductor device includes providing a first substrate structure, the first substrate structure including a first substrate body, a first conductive connection structure and a first two-dimensional inorganic layer having negative charges disposed adjacent to each other over the first substrate body, providing a second substrate structure, the second substrate structure including a second substrate body, a second conductive connection structure and a second two-dimensional inorganic layer having negative charges disposed adjacent to each other over the second substrate body, and joining the first and second substrate structure to each other such that the first conductive connection structure and the second conductive connection structure are connected to each other, and the first two-dimensional inorganic layer and the second two-dimensional inorganic layer are joined to each other.
1 . A method of fabricating a semiconductor device, the method comprising:
providing a first substrate structure including a first substrate body, and a first conductive connection structure and a first two-dimensional inorganic layer disposed adjacent to each other over the first substrate body, the first two-dimensional inorganic layer having negative charges;
providing a second substrate structure including a second substrate body, and a second conductive connection structure and a second two-dimensional inorganic layer disposed adjacent to each other over the second substrate body, the second two-dimensional inorganic layer having negative charges; and
joining the first and second substrate structures to each other such that the first conductive connection structure and the second conductive connection structure are connected to each other, and the first two-dimensional inorganic layer and the second two-dimensional inorganic layer are joined to each other,
wherein joining the first and second substrate structure includes:
applying an organic material having positive charges on one of the first two-dimensional inorganic layer of the first substrate structure and the second two-dimensional inorganic layer of the second substrate structure;
aligning the first two-dimensional inorganic layer and the second two-dimensional inorganic layer with each other by using the organic material having positive charges and physically contacting the first and second substrate structures each other with the aligned first and second two-dimensional inorganic layers; and
removing the organic material having positive charges and joining the first two-dimensional inorganic layer and the second two-dimensional inorganic layer to each other.
2 . The method of claim 1 , wherein providing the first substrate structure includes:
providing the first substrate body;
forming a first passivation layer over the first substrate body;
forming the first two-dimensional inorganic layer on the first passivation layer;
forming a first hole pattern penetrating the first two-dimensional inorganic layer and the first passivation layer over the first substrate body; and
filling the first hole pattern with a conductive material to form the first conductive connection structure, and
wherein an uppermost surface of the first conductive connection structure is located at a lower level than an uppermost surface of the first two-dimensional inorganic layer.
3 . The method of claim 2 , wherein forming the first two-dimensional inorganic layer includes:
applying an organic material having positive charges on the first passivation layer;
disposing a two-dimensional inorganic sheet having negative charges on the organic material having positive charges; and
joining the two-dimensional inorganic sheet to the first passivation layer by performing at least one of ultraviolet (UV) treatment and heat treatment to remove the organic material.
4 . The method of claim 1 , wherein providing the second substrate structure includes:
providing the second substrate body;
forming a second passivation layer over the second substrate body;
forming the second two-dimensional inorganic layer on the second passivation layer;
forming a second hole pattern penetrating the second two-dimensional inorganic layer and the second passivation layer over the second substrate body; and
filling the second hole pattern with a conductive material to form the second conductive connection structure, and
wherein an uppermost surface of the second conductive connection structure is located at a higher level than an uppermost surface of the second two-dimensional inorganic layer.
5 . The method of claim 4 , wherein forming the second two-dimensional inorganic layer includes:
applying an organic material having positive charges on the second passivation layer;
disposing a two-dimensional inorganic sheet having negative charges on the organic material having positive charges; and
joining the two-dimensional inorganic sheet to the second passivation layer by performing at least one of ultraviolet (UV) treatment and heat treatment to remove the organic material.
6 . The method of claim 1 , wherein the organic material having positive charges includes at least one selected from the group consisting of poly(acrylic acid) (PAA), poly(allylamine hydrochloride) (PAH), poly(anilinepropanesulfonic acid) (PAPSA), poly(dimethyl-diallylammonium chloride) (PDDA), poly(ethyleneimine) (PEI), poly(L-lysin)), poly(methacrylic acid) (PMA), poly(styrene-sulfonate) (PSS), poly(vinylsulfonate) (PVS), poly-L-arginine (PLAr), and poly-L-histidine (PLH).
7 . The method of claim 1 , wherein removing the organic material having positive charges includes performing at least one of ultraviolet (UV) treatment and heat treatment for the organic material having positive charges.
8 . The method of claim 1 , wherein joining the first and second substrate structures includes:
applying an inorganic material having positive charges on one of the first two-dimensional inorganic layer of the first substrate structure and the second two-dimensional inorganic layer of the second substrate structure;
aligning the first two-dimensional inorganic layer and the second two-dimensional inorganic layer with each other by using the inorganic material having positive charges and physically contacting the first and second substrate structures each other with the aligned first and second two-dimensional inorganic layers; and
performing one of ultraviolet (UV) treatment and heat treatment for the inorganic material having positive charges to form an insulating joint portion in which the first two-dimensional inorganic layer, the inorganic layer, and the second two-dimensional inorganic layer are sequentially stacked.
9 . The method of claim 8 , wherein the inorganic material having positive charges includes one selected from the group consisting of:
AlO 4 Al 12 (OH) 24 H 2 O 12 7+ ,
Al 2 O 8 Al 28 (OH) 56 (H 2 O) 26 18+ ,
A 1-x B x (OH) 2 x+ wherein 0<x<1, A is Mg 2+ , Co 2+ , Ni 2+ , or Zn 2+ and B is Al 3+ , Co 3+ , or Fe 3+ , and RE(OH) 2.5 (H 2 O) 0.5+ wherein RE is Nd 3+ , Sm 3+ , Eu 3+ , Gd 3+ , Tb 3+ , Dy 3+ , Ho 3+ , or Er 3+ .
10 . The method of claim 1 , wherein each of the first two-dimensional inorganic layer and the second two-dimensional inorganic layer includes one selected from the group consisting of Ti 0.91 O 2 0.36− , Ti 0.87 O 2 0.52− , Ti 0.8 Co 0.2 O 2 0.4− , Ti 0.6 Fe 0.4 O 2 0.4− , MnO 2 0.4− , Nb 6 O 17 4− , Nb 3 O 8 − , TiNbO 5 − , Ti 5 NbO 14 3− , TaO 3 − , RE 2 Ti 3 O 10 2− wherein RE is one of La, Pr, Sm, Nd, Eu, Gd, and Dy), Bi 4 Ti 3 O 12 2− , LaNb 2 O 7 − , SrTa 2 O 7 2− , Ca 2 Nb 3 O 10 − , Sr 2 Nb 3 O 10 − , and W 2 O 7 2− .
11 . The method of claim 1 , wherein the first substrate structure includes a first wiring formed over the first substrate body and electrically connected to the first conductive connection structure, and
wherein the second substrate structure includes a second wiring formed over the second substrate body and electrically connected to the second conductive connection structure.