Semiconductor package structure
A semiconductor package structure and a method of manufacturing a semiconductor package structure is provided. The semiconductor package structure includes a carrier and a component. The carrier includes a first part and a second part separated from the first part. The component is disposed under the first part and electrically connected to the second part. The first part is configured to be electrically connected to a device disposed over the first part.
1 . A semiconductor package structure, comprising:
a leadframe comprising a first part and a second part separated from the first part, wherein the first part has a first width and the second part has a second width larger than the first width;
a component disposed under the first part and electrically connected to the second part,
wherein the first part is configured to be electrically connected to a device disposed over the first part; and
a dielectric layer partially embedding the leadframe and the component,
wherein the first part and the second part have the same height and are at the same elevation with respect to the dielectric layer.
2 . The semiconductor package structure of claim 1 , wherein the leadframe comprises a third part disposed under the second part and having a curved surface.
3 . The semiconductor package structure of claim 1 , wherein the first part and the second part are disposed on a top surface of the dielectric layer.
4 . The semiconductor package structure of claim 3 , wherein a trace portion of the first part comprises a plurality of sections separated from each other, and wherein at least one of the sections of the trace portion of the first part is exposed from an insulation layer disposed between the trace portion and a backside surface of the component, wherein the trace portion further comprises a plurality of bending sections staggered and separated from each other, and wherein the insulation layer includes a thermal interface material configured to thermally conduct heat from the component to the leadframe.
5 . The semiconductor package structure of claim 1 , wherein the leadframe comprises a third part disposed below the first part and the second part, and wherein the third part is electrically connected to the component and wherein the second part is non-overlapping with the component in a direction perpendicular to a backside surface of the component.
6 . The semiconductor package structure of claim 1 , further comprising a conductive layer including electroless Nickel immersion Gold and disposed on at least one of the first part and the second part, a solder bump disposed on the conductive layer, and an intermetallic layer between the conductive layer and the solder bump.
7 . The semiconductor package structure of claim 1 , further comprising a redistribution structure disposed under the component and separated from the first part and the second part by the component, wherein the component is electrically connected to the device through the first part, the second part, and the redistribution structure.
8 . A semiconductor package structure, comprising:
a leadframe; and
a component disposed under the leadframe and comprising a plurality of pads at an active surface of the component;
wherein the leadframe comprises a trace portion disposed over a backside surface of the component and a base portion non-overlapping with the component in a direction perpendicular to the backside surface, and
wherein the trace portion is electrically insulated from the backside surface of the component and electrically connected to the pads of the component; and
a protective layer covering and contacting a lateral surface of the trace portion and a lateral surface of the base portion.
9 . The semiconductor package structure of claim 8 , wherein the trace portion and the base portion have the same height and are at the same elevation with respect to the component and non-overlapping with each other.
10 . The semiconductor package structure of claim 9 , wherein the leadframe comprises a conductive pillar adjacent to the component and extending from the trace portion in the direction, and wherein the conductive pillar is electrically connected to the component through a redistribution structure disposed below the component, and wherein the conductive pillar has a curved and inwardly dished lateral surface and includes a monolithic structure.
11 . The semiconductor package structure of claim 10 , further comprising a dielectric layer embedding the conductive pillar and conforming to the curved and inwardly dished lateral surface of the conductive pillar.
12 . The semiconductor package structure of claim 8 , wherein the leadframe comprises an antenna pattern non-overlapping with the component in a direction vertical to the backside surface thereof, wherein the trace portion and the antenna pattern have the same height and are at the same elevation with respect to the component, wherein the protective layer covers and contacts a lateral surface of the antenna pattern, and wherein the protective layer contacts a top surface of the antenna pattern, without contacting a bottom surface of the antenna pattern.
13 . The semiconductor package structure of claim 12 , further comprising a redistribution structure disposed on the active surface of the component and electrically connected to the pads of the component and the trace portion of the leadframe, wherein the leadframe comprises a conductive pillar disposed between the trace portion and the antenna pattern, and wherein the antenna pattern is electrically connected to the component through the conductive pillar and the redistribution structure, and wherein the conductive pillar has a curved surface.
14 . The semiconductor package structure of claim 8 , wherein the protective layer covers a portion of a top surface of the trace portion, without covering a bottom surface of the trace portion, and wherein the protective layer covers a portion of a top surface of the base portion, without covering a bottom surface of the base portion.
15 . A semiconductor package structure, comprising:
a leadframe; and
a component surrounded by the leadframe;
wherein the leadframe comprises an interconnection element adjacent to the component, and
wherein the interconnection element has a first curved portion and a second curved portion connected to the first curved portion, wherein the first curved portion and the second curved portion curve in opposite directions and are at different elevation with respect to an active surface of the component.
16 . The semiconductor package structure of claim 15 , wherein the interconnection element has a central width smaller than a bottom width, and wherein the central width is the smallest width of the interconnection element.
17 . The semiconductor package structure of claim 15 , wherein the interconnection element has a concave and curved lateral surface.
18 . The semiconductor package structure of claim 17 , wherein the leadframe comprises a base portion connected to the interconnection element, and a trace portion, and wherein the base portion is disposed around the trace portion, wherein the interconnection element contacts the base portion, without contacting the trace portion.
19 . The semiconductor package structure of claim 18 , further comprising:
a protective layer covering and contacting a lateral surface of the trace portion and a lateral surface of the base portion, wherein the protective layer covers a portion of a top surface of the trace portion, without covering a bottom surface of the trace portion, and wherein the protective layer covers a portion of a top surface of the base portion, without covering a bottom surface of the base portion;
a dielectric layer embedding the interconnection element and the component, wherein the trace portion and the base portion are disposed on the dielectric layer, have the same height, and are at the same elevation with respect to the dielectric layer.
20 . The semiconductor package structure of claim 15 , further comprising a dielectric layer embedding the interconnection element and the component and having a curved lateral surface conforming to the first curved portion and the second curved portion, wherein the curved lateral surface has a convex profile.