Semiconductor device
A semiconductor device, including first and second conductive patterns, a plurality of first semiconductor chips each having a switching device, a plurality of second semiconductor chips each having a diode device, a plurality of first wires, respectively coupling low-potential electrodes of the switching devices and the second conductive pattern, and a plurality of second wires, respectively coupling anode electrodes of the diode devices and the second conductive pattern. Lengths of the first and second wires are substantially equal. The first semiconductor chips and the second semiconductor chips are arranged on the first conductive pattern in two rows, each row being in a first direction and including at least one first semiconductor chip and at least one second semiconductor chip, the first direction being parallel to a predetermined side of the first conductive pattern. The first and second wires are each in a second direction orthogonal to the first direction.
1 . A semiconductor device comprising:
a first conductive pattern;
a second conductive pattern;
a third conductive pattern;
a fourth conductive pattern;
a plurality of first semiconductor chips, each first semiconductor chip having
a front face,
a back face that is coupled to the first conductive pattern, and
a switching device formed in said each first semiconductor chip, the switching device having a high-potential electrode at the back face and a low-potential electrode at the front face;
a plurality of second semiconductor chips, each second semiconductor chip having
a front face,
a back face that is coupled to the first conductive pattern, and
a diode device formed in said each second semiconductor chip, the diode device having a cathode electrode at the back face thereof and an anode electrode at the front face thereof;
a plurality of first wires, respectively coupling the low-potential electrodes of the plurality of switching devices and the second conductive pattern; and
a plurality of second wires, respectively coupling the anode electrodes of the plurality of diode devices and the second conductive pattern, each of the plurality of second wires having a length substantially equal to a length of each of the plurality of first wires, wherein
the plurality of first semiconductor chips and the plurality of second semiconductor chips are arranged on the first conductive pattern in two rows that includes a first row and a second row, each row being in a first direction and including at least one of the plurality of first semiconductor chips and at least one of the plurality of second semiconductor chips, the first direction being parallel to a predetermined side of the first conductive pattern,
the plurality of first wires and the plurality of second wires are each in a second direction orthogonal to the first direction,
each of the plurality of first semiconductor chips in the first row has a control electrode that is connected, via a third wire, to the third conductive pattern,
each of the plurality of first semiconductor chips in the second row has a control electrode that is connected, via a fourth wire, to the fourth conductive pattern, and
in a plan view, the first and second conductive patterns are located between the third conductive pattern and the fourth conductive pattern.
2 . The semiconductor device according to claim 1 , wherein
a same number of the first semiconductor chips are in each of the two rows, where said same number is a first number, and
a same number of the second semiconductor chips are in each of the two rows, where said same number is a second number.
3 . The semiconductor device according to claim 2 , wherein the first number is equal to the second number.
4 . The semiconductor device according to claim 1 , wherein
each of the switching devices is a metal-oxide-semiconductor field-effect transistor (MOSFET), wherein
the high-potential electrode is a drain electrode, and
the low-potential electrode is a source electrode.
5 . The semiconductor device according to claim 1 , wherein
each of the first semiconductor chips has a body diode formed therein, the body diode having
a cathode electrode thereof at the back face of said each first semiconductor chip, and
an anode electrode thereof at the front face of said each first semiconductor chip.
6 . The semiconductor device according to claim 1 , wherein
a difference in length between each of the plurality of first wires and each of the plurality of second wires is within a range of manufacturing variations.
7 . The semiconductor device according to claim 6 , wherein
the manufacturing variations are smaller in the first direction than in the second direction.
8 . The semiconductor device according to claim 1 , wherein
the first and second semiconductor chips are alternately arranged in each of the two rows.
9 . The semiconductor device according to claim 8 , wherein
one of the plurality of first semiconductor chips and one of the plurality of second semiconductor chip are respectively arranged in the two rows on a same end side thereof.
10 . The semiconductor device according to claim 1 , wherein
the second conductive pattern has a rectangular shape, and
the first conductive pattern is so shaped as to sandwich the second conductive pattern from two opposite sides along the first direction of the second conductive pattern, and
the plurality of first semiconductor chips and the plurality of second semiconductor chips are arranged on the first conductive pattern in the two rows respectively closer to the two opposite sides.
11 . The semiconductor device according to claim 10 , wherein
the first conductive pattern has a U shape in a top view of the semiconductor device.
12 . The semiconductor device according to claim 1 , wherein
the first conductive pattern has a rectangular shape, and
the second conductive pattern is so shaped as to sandwich the first conductive pattern from two opposite sides along the first direction of the first conductive pattern, and
the plurality of first semiconductor chips and the plurality of second semiconductor chips are arranged on the first conductive pattern in the two rows respectively closer to the two opposite sides.
13 . The semiconductor device according to claim 12 , wherein
the second conductive pattern has a U shape in a top view of the semiconductor device.
14 . The semiconductor device according to claim 1 , wherein
the first semiconductor chip, or the second semiconductor chip, or both, is a SiC substrate chip.
15 . The semiconductor device according to claim 1 , wherein
the third conductive pattern is coupled to the second conductive pattern; and
the semiconductor device further includes:
a third semiconductor chip having another switching device formed therein, the third semiconductor chip being arranged in the third conductive pattern,
a fourth semiconductor chip having another diode device formed therein, the fourth semiconductor chip being arranged in the third conductive pattern,
another wire coupling a low-potential electrode of said another switching device in the third semiconductor chip and the fourth conductive pattern, and
yet another wire coupling an anode electrode of said another diode device in the fourth semiconductor chip and the fourth conductive pattern, the yet another wire having a length substantially equal to a length of the another wire.