Semiconductor package

1 . A semiconductor package, comprising:

a lower substrate including a lower wiring layer;

a semiconductor chip disposed on the lower substrate, and electrically connected to the lower wiring layer;

an upper substrate disposed on the semiconductor chip, and including an upper wiring layer;

a first connection structure disposed on the lower wiring layer, and having a first hollow open toward the upper substrate;

a second connection structure disposed below the upper wiring layer, and having a second hollow open toward the lower substrate;

a conductive connection member disposed between the first connection structure and the second connection structure, and filling at least a portion of the first hollow; and

an encapsulant disposed between the lower substrate and the upper substrate, and encapsulating at least a portion of each of the semiconductor chip, the first connection structure and the second connection structure,

wherein the first connection structure is inserted into the second connection structure,

wherein the conductive connection member has a first lower end in the first hollow, and a second lower end adjacent to the lower substrate outside of the first hollow, and

wherein the first lower end is disposed on a lower level or the same level as the second lower end.

2 . The semiconductor package of claim 1 , wherein the first lower end is disposed closer to the lower substrate than the second lower end.

3 . The semiconductor package of claim 1 , further comprising:

a first surface layer disposed on at least a portion of the first hollow, and in contact with the conductive connection member; and

a second surface layer disposed on at least a portion of the second hollow, and in contact with the conductive connection member.

4 . The semiconductor package of claim 3 ,

wherein the first surface layer and the second surface layer comprise gold (Au) or an alloy of the gold (Au), and

wherein the conductive connection member comprises tin (Sn) or an alloy including the tin (Sn).

5 . The semiconductor package of claim 1 ,

wherein the first connection structure comprises a porous conductive layer disposed in the first hollow, and

wherein the conductive connection member is filled in an interior of the porous conductive layer.

6 . The semiconductor package of claim 5 ,

wherein the porous conductive layer comprises a plurality of holes formed in a metal layer filling the first hollow, and

wherein some of the plurality of holes are connected to each other.

7 . The semiconductor package of claim 6 , wherein the metal layer and the first connection structure comprise copper (Cu) or an alloy including the copper (Cu).

8 . A semiconductor package, comprising:

a lower substrate including a lower wiring layer;

a semiconductor chip disposed on the lower substrate, and electrically connected to the lower wiring layer;

an upper substrate disposed on the semiconductor chip, and including an upper wiring layer;

a first connection structure disposed on the lower wiring layer, and having a first hollow open toward the upper substrate;

a second connection structure disposed below the upper wiring layer, and having a second hollow open toward the lower substrate;

a conductive connection member disposed between the first connection structure and the second connection structure, and filling at least a portion of the first hollow;

a first surface layer disposed on at least a portion of the first hollow, and in contact with the conductive connection member; and

an encapsulant disposed between the lower substrate and the upper substrate, and encapsulating at least a portion of each of the semiconductor chip, the first connection structure and the second connection structure,

wherein the first connection structure is accommodated within the second hollow of the second connection structure,

wherein the first connection structure has an inner surface defining an inner wall of the first hollow, and a bottom surface defining a bottom of the first hollow,

wherein the first surface layer covers the inner surface and the bottom surface of the first connection structure,

wherein the conductive connection member fills the first hollow of the first connection structure along the first surface layer, and

wherein the conductive connection member comprises a first lower end in the first hollow, and a second lower end outside of the first hollow, and the first lower end is a same distance as the second lower end to the lower substrate or closer than the second lower end to the lower substrate.

9 . The semiconductor package of claim 8 ,

wherein the second connection structure has an inner side surface facing the first connection structure and forming an inner wall of the second hollow, and an outer side surface disposed opposite to the inner side surface, and

wherein the inner side surface is spaced apart from the first connection structure.

10 . The semiconductor package of claim 9 , wherein the conductive connection member is filled between the inner side surface of the second connection structure and the first connection structure.

11 . The semiconductor package of claim 8 ,

wherein the second connection structure has an inner side surface facing the first connection structure and forming an inner wall of the second hollow, and an outer side surface disposed opposite to the inner side surface, and

wherein the semiconductor package further comprises a solder resist layer disposed on a surface of the upper substrate and the outer side surface of the second connection structure.

12 . The semiconductor package of claim 8 , further comprising a second surface layer disposed on at least a portion of the second hollow of the second connection structure, and in contact with the conductive connection member.

13 . The semiconductor package of claim 12 ,

wherein the second connection structure has an inner side surface facing the first connection structure and forming an inner wall of the second hollow, and a bottom surface forming a bottom of the second hollow, and

wherein the first surface layer of the first connection structure is in contact with the second surface layer covering the bottom surface of the second hollow.

14 . The semiconductor package of claim 12 ,

wherein the second connection structure has an inner side surface facing the first connection structure and forming an inner wall of the second hollow, and a bottom surface forming a bottom of the second hollow, and

wherein the first surface layer of the first connection structure is spaced apart from the second surface layer covering the bottom surface of the second hollow.

15 . The semiconductor package of claim 8 , further comprising a bump structure disposed between the lower substrate and the semiconductor chip, and electrically connecting a connection pad of the semiconductor chip to the lower wiring layer.

16 . The semiconductor package of claim 15 , wherein the bump structure comprises:

a third connection structure disposed on the lower wiring layer and having a third hollow open toward the semiconductor chip;

a fourth connection structure disposed below the connection pad and having a fourth hollow open toward the lower substrate; and

a connection member filling at least a portion of the third hollow and the fourth hollow,

wherein the third connection structure is inserted into the fourth connection structure.

17 . A semiconductor package, comprising:

a lower substrate including a lower wiring layer;

a semiconductor chip disposed on the lower substrate, and electrically connected to the lower wiring layer;

an upper substrate disposed on the semiconductor chip, and including an upper wiring layer;

a first connection structure disposed on the lower wiring layer, and protruding toward the upper substrate, wherein the first connection structure has a first hollow open toward the upper substrate;

a second connection structure disposed below the upper wiring layer, and protruding toward the lower substrate to partially surround the first connection structure;

a surface layer covering at least a portion of a surface of the first connection structure; and

a conductive connection member extending along the surface layer between the first connection structure and the second connection structure,

wherein the first connection structure has an outer surface facing the second connection structure, an inner surface opposite to the outer surface, and a bottom surface extended from one end of the inner surface,

wherein the surface layer covers the inner surface and the bottom surface of the first connection structure,

wherein the conductive connection member fills the first connection structure along the surface layer, and

wherein the conductive connection member comprises a first lower end in the first hollow, and a second lower end outside of the first hollow, and the first lower end is a same distance as the second lower end to the lower substrate or closer than the second lower end to the lower substrate.

18 . The semiconductor package of claim 17 ,

wherein the first hollow is defined by the inner surface and the bottom surface of the first connection structure, and

wherein the surface layer extends along an inner wall of the first hollow.

19 . The semiconductor package of claim 18 , wherein the conductive connection member extends into the first hollow along the surface layer.

20 . The semiconductor package of claim 17 , wherein the surface layer comprises gold (Au) or an alloy including the gold (Au).