Granted Patent
Utility
US 6,459,618 · App. 09/880,367
Method of programming a non-volatile memory cell using a drain bias
Inventor:
Janet Wang
Patented Case
View Patent ↗
Granted: Oct 1, 2002
Filed: Jun 13, 2001
Inventor
Janet Wang
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.