IP Library Granted Patent US 6,801,415
Granted Patent Utility
US 6,801,415 · App. 10/232,111

Nanocrystalline layers for improved MRAM tunnel junctions

Inventors: Jon Slaughter, Renu W. Dave, Jijun Sun
Patented Case View Patent ↗
Granted: Oct 5, 2004 Filed: Aug 30, 2002
Inventors
Jon Slaughter
Renu W. Dave
Jijun Sun
Assignee (at issue)
Freeescale Semiconductor, Inc.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,801,415
App. No.
10/232,111
Filed
2002-08-30
Granted
2004-10-05
Kind
B2