IP Library Granted Patent US 6,806,508
Granted Patent Utility
US 6,806,508 · App. 09/839,941

Homoepitaxial gallium nitride based photodetector and method of producing

Inventors: Mark P. D'Evelyn, Nicole Evers, Kanin Chu
Patented Case View Patent ↗
Granted: Oct 19, 2004 Filed: Apr 20, 2001
Inventors
Mark P. D'Evelyn
Nicole Evers
Kanin Chu
Assignee (at issue)
General Electric Company

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Quick Facts
Patent No.
US 6,806,508
App. No.
09/839,941
Filed
2001-04-20
Granted
2004-10-19
Kind
B2