IP Library Granted Patent US 7,115,969
Granted Patent B1
US 7,115,969 · App. 10/242,966 · Granted Oct 3, 2006

Fixed parallel plate MEMS capacitor microsensor and microsensor array and method of making same

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Quick Facts
Patent No.
US 7,115,969
App. No.
10/242,966
Filed
Sep 13, 2002
Granted
Oct 3, 2006
Kind
B1
Art Unit
2811
USPC
257/532
Abstract

A fixed parallel plate micro-mechanical systems (MEMS) based sensor is fabricated to allow a dissolved dielectric to flow through a porous top plate, coming to rest on a bottom plate. A post-deposition bake ensures further purity and uniformity of the dielectric layer. In one embodiment, the dielectric is a polymer. In one embodiment, a support layer is deposited onto the top plate for strengthening the sensor. In another embodiment, the bottom plate is dual-layered for a narrowed gap. Integrated circuit arrays of such sensors can be made, having multiple devices separated from each other by a physical barrier, such as a polycrystalline containment rim or trough, for preventing polymer material from one sensor from interfering with that of another.

Claims (11)

1. A fixed, parallel plate capacitive microsensor comprising:

a bottom plate electrode disposed on a substrate;

a porous top plate electrode disposed in fixed, spaced relation to the bottom plate electrode; and

a dielectric disposed between said bottom plate electrode and said top plate electrode and through said porous top plate electrode.

2. The microsensor of claim 1 , wherein said porous top plate electrode is fabricated with pores using standard photolithography.

3. The microsensor of claim 1 , further comprising one or more support layers deposited onto said porous top plate electrode.

4. The microsensor of claim 1 , wherein said bottom plate electrode is a drive electrode.

5. The microsensor of claim 1 , wherein said bottom plate electrode is a dual-layer electrode.

6. The microsensor of claim 1 , wherein said dielectric is selected from the group consisting of a polymer, a ceramic, and a solgel.

7. The microsensor of claim 1 , wherein said porous top plate electrode is made from a polycrystalline semiconductor material or a metal.

8. The microsensor of claim 1 , wherein said bottom plate electrode is made from a polycrystalline semiconductor material or a metal.