IP Library Granted Patent US 7,255,981
Granted Patent B2
US 7,255,981 · App. 11/368,196 · Granted Aug 14, 2007

Mask, substrate with light reflective film, method for manufacturing light reflective film, liquid crystal display device, and electronic apparatus

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Quick Facts
Patent No.
US 7,255,981
App. No.
11/368,196
Filed
Mar 3, 2006
Granted
Aug 14, 2007
Kind
B2
Art Unit
1756
USPC
430/321
Abstract

A substrate is provided with a light reflective film including a base and a reflective layer, in which a plurality of concave portions or convex portions formed on the surface of the base are randomly arranged in the plane direction in 100 to 2,000 RGB dot units or a whole screen unit, are formed using a mask in which light transmissive or non-transmissive portions are randomly arranged in the plane direction in 100 to 2,000 RGB dot units or the whole screen unit.

Claims (23)

1. A method for manufacturing a light reflective film comprising the steps of:

forming a first base including a plurality of concave portions or convex portions by performing a first exposure process on a first photosensitive resin using a first mask having a striped-shaped pattern of light transmissive or non-transmissive portions in a row direction or in a column direction that is repeated over a plurality of lines, a plurality of the light transmissive and the non-transmissive portions being randomly arranged in a plane direction in 100 to 2,000 dot units;

forming a second base having a plurality of continuous concave portions and convex portions by depositing a second photosensitive resin on the first base and subsequently performing a second exposure process on the second photosensitive resin; and

forming a reflective layer on the second base.

2. The method of claim 1 , wherein said first exposure process is performed on the first photosensitive resin comprising at least one of acryl-based resin, epoxy-based resin, silicon-based resin, phenol-based resin, oxetane-based resin, silica particles, titanium oxide, zirconium oxide, and aluminum oxide.

3. The method of claim 1 , wherein said first exposure process is performed on the first photosensitive resin comprising an inorganic filler.

4. The method of claim 1 , wherein said step of forming the first base further comprises applying a first layer comprising the photosensitive resin uniformly on a supporting portion.

5. The method of claim 4 , further comprising pre-baking the first layer before said first exposure process is performed.

6. The method of claim 1 , wherein said first exposure process is performed at an intensity of from about 50 mJ/cm 2 to about 300 mJ/cm 2 .

7. The method of claim 1 , wherein said forming the first base step further comprises a first positive development process.

8. The method of claim 1 , further comprising a first post-exposure process that is performed on an entire surface of the first base, said first post-exposure process is performed before the second base is formed.

9. The method of claim 8 , wherein said first post-exposure process is performed at an intensity of about 300 mJ/cm 2 .

10. The method of claim 1 , further comprising a first post-baking process that is performed on the first base by heating the first base, said first post-baking process hardens the first base and is performed after said first exposure process.

11. The method of claim 10 , wherein said first post-baking process is performed at about 220° C. for about 50 minutes.

12. The method of claim 1 , further comprising depositing a coupling agent on the first base.

13. The method of claim 12 , wherein said step of depositing a coupling agent further comprises depositing a silane coupling agent.

14. The method of claim 1 , wherein said step of forming the second base further comprises applying a second layer comprising the second photosensitive resin on the first base.

15. The method of claim 14 , further comprising pre-baking the second layer before said second exposure process.

16. The method of claim 1 , wherein said second exposure process is performed at an intensity of from about 50 mJ/cm 2 to about 300 mJ/cm 2 .

17. The method of claim 1 , further comprising subjecting the second base to a post-exposure process at an intensity of about 300 mJ/cm 2 .

18. The method of claim 17 , further comprising post-baking the second base after the post-exposure process.

19. The method of claim 1 , wherein said reflective layer comprises at least one of aluminum and silver.

20. The method of claim 1 , further comprising photo-etching the reflecting layer to remove excess portions of the reflecting layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 14, 2016
From: SEIKO EPSON CORPORATION
To: BOE TECHNOLOGY (HK) LIMITED
Reel/Frame 037515/0050 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 14, 2016
From: BOE TECHNOLOGY (HK) LIMITED
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 037515/0082 →