IP Library › Granted Patent US 7,312,127
Granted Patent B2
US 7,312,127 · App. 11/389,643 · Granted Dec 25, 2007

Incorporating dopants to enhance the dielectric properties of metal silicates

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Quick Facts
Patent No.
US 7,312,127
App. No.
11/389,643
Filed
Mar 23, 2006
Granted
Dec 25, 2007
Kind
B2
Art Unit
2812
USPC
438/285
Abstract

The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. According to one embodiment the metal silicate comprises a group IV metal and the dopant is an oxide of one of an alkaline metal and an alkaline earth metal. According to another embodiment the metal silicate comprises a group III metal.

Claims (10)

1. A high-k dielectric layer for a semiconductor integrated circuit, the layer comprising:

a metal silicate layer that includes metal silicates comprising at least one of Sc, Y, La, Ti, Nd, Sm, Gd, Fe, Co, Cr, V, Mg, W, Bi, Pb, U, Th, Cu and Yb doped with dopant oxides having dissociable oxygen to form a high-K dielectric layer suitable for use in a channel of a CMOS device in the electrical circuitry of a semiconductor integrated circuit, the high-K dielectric layer having a K value of greater than 10.

2. The high-k dielectric layer as recited in claim 1 , wherein the dopant oxide is an oxide of one of an alkaline metal and an alkaline earth metal.

3. The high-k dielectric layer as recited in claim 1 , wherein the dopants are oxides with dissociation energies less than about 1774 kJ/mol.

4. The high-k dielectric layer as recited in claim 3 , wherein the dopant oxides having dissociable oxygen include at least one of oxides of Na and Be.

5. The high-k dielectric layer as recited in claim 1 , wherein the metal silicate layer includes metal silicates of at least one of Sc, Y, La, and Ac.

6. The high-k dielectric layer as recited in claim 1 , wherein the dopant oxides having dissociable oxygen include at least one of oxides of Na and Be.

7. The high-k dielectric layer as recited in claim 1 , wherein the metal silicate layer includes metal silicates of at least one of Mg, W, Bi, Ba, Ta, Pb, U, Th, and Cu.

8. The high-k dielectric layer as recited in claim 1 , wherein the high-k dielectric layer has an interfacial density of approximately the same as the interfacial density at a silicon and silicon dioxide interface.

9. The high-k dielectric layer as recited in claim 1 , wherein the high-k dielectric layer has an interfacial density of approximately 10 10 eV/cm.