IP Library Granted Patent US 7,316,936
Granted Patent B2
US 7,316,936 · App. 11/616,617 · Granted Jan 8, 2008

Laser decapsulation method

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Quick Facts
Patent No.
US 7,316,936
App. No.
11/616,617
Filed
Dec 27, 2006
Granted
Jan 8, 2008
Kind
B2
Art Unit
2813
USPC
438/15
Abstract

A decapsulation apparatus 100 has a laser 8 that removes plastic encapsulant from a device 24 . Chamber 20 is sealed. Exhaust port 9 removes debris and fumes. The device 24 is positioned and scanned using an X, Y table 2 . A hinged end 4 rotates the device to an acute angle of incidence with respect to a laser 8. Endpoint detector 10 senses the exposed integrated circuit and moves or shuts down the laser 8.

Claims (50)

1. A method of manufacturing integrated circuits, the method comprising;

forming encapsulated integrated circuits; and

sampling select integrated circuits to verify if the finished integrated circuits are made to manufacturing specifications by selectively removing portions of the encapsulation with a laser that is suitable for breaking cross linked bonds of the encapsulant without damaging the integrated circuits, wherein a thin layer of encapsulant is left on at least one portion of at least one of the sampled integrated circuits.

2. The method of claim 1 , wherein selectively removing portions of the encapsulant of the select sampled integrated circuits further comprises:

monitoring amplitude and frequency of the laser light reflected of each selected integrated circuit; and

when a change in at least one of the amplitude and frequency is detected, moving each selected integrated circuit.

3. The method of claim 2 , wherein moving each selected integrated circuit further comprises:

advancing a stage upon which the select integrated circuit is mounted on.

4. The method of claim 1 , wherein selectively removing portions of the encapsulant of the select sampled integrated circuits with a laser further comprises:

using a laser with wavelengths in the infrared range that includes at least one range of 725-900 cm-1, 1150-1300 cm-1, 1400-1500 cm-1 and 1600-1750 cm-1.

5. The method of claim 1 , wherein selectively removing portions of the encapsulation of the select sampled integrated circuits with a laser further comprises:

using at least one of a YAG laser and an infrared laser.

6. The method of claim 1 , wherein selectively removing portions of the encapsulation of the select sampled integrated circuits further comprises:

changing an angle of incident of the laser by rotating a stage upon which the integrated circuits are mounted.

7. The method of claim 1 , further comprising:

testing the thin layer of encapsulant for contaminates.

8. The method of claim 1 , wherein selectively removing portions of the encapsulation of the select sampled integrated circuits further comprises:

removing debris caused by the removal of select portions of encapsulate by at least one of using a flow of gas to direct the debris away from the integrated circuits and capturing the debris in a dust bin.

9. A method of manufacturing integrated circuits, the method comprising:

forming integrated circuits with a manufacturing process, wherein each integrated circuit is encapsulated to protect the integrated circuit from environmental factors;

selecting certain formed integrated circuits;

placing each selected integrated circuit on a stage in an enclosure;

directing a laser beam having a select wavelength on a select portion of the encapsulant to remove the select portion of encapsulant, wherein with at least one of the select integrated circuits the select removed portion of encapsulant has a depth, the depth being less than a thickness of the encapsulant;

monitoring the laser beam reflected off of the integrated circuit;

moving the stage based at least in part on the monitored reflected laser beam;

terminating the laser beam based at least in part on the monitored reflect laser beam; and

testing the selected integrated circuits with the select portion of encapsulant removed to verify that the integrated circuits are formed to manufacture specifications.

10. The method of claim 9 , further comprising:

exhausting debris from the enclosure.

11. The method of claim 10 , wherein exhausting debris from the stage further comprises:

directing a flow of gas to disperse the debris away from the integrated circuit.

12. The method of claim 9 , further comprising:

catching debris particles in a dust bin.

13. The method of claim 9 , further comprising:

testing for contaminates in a thin layer of encapsulant left on the at least one select integrated circuit having the select removed portion with a depth less than the depth of the encapsulant.

14. A manufacturing method of removing encapsulant from an integrated circuit; the method comprising:

placing an integrated circuit on a stage in an enclosure;

directing a laser beam on the encapsulation of the integrated circuit, wherein the laser beam has a wavelength that is suitable for breaking cross linked bonds of the encapsulant without damaging the underlying integrated circuit;

removing at least one select portion of the encapsulant with the laser beam; and

capturing debris particles in a dust bin.

15. The method of claim 14 , further comprising:

monitoring the laser beam reflected off of the integrated circuit; and

based at least in part on the monitored laser beam, doing at least one of moving the stage and terminating the laser beam.

16. The method of claim 14 , further comprising:

after the removing the at least one select portion of the encapsulant, verifying the integrated circuit is made to manufacturing specifications.

17. The method of claim 14 , further comprising:

directing a flow of gas to move the debris away from the integrated circuit.

18. The method of claim 14 , further comprising:

leaving a thin layer of encapsulant at the at least one select portion, and

testing for contaminates in the thin layer of encapsulant.