Method for manufacturing semiconductor device
View Patent ↗In the process of forming a predetermined pattern in a process target film, a stacked hard mask film having a first film, a second film and a third film stacked in this order is formed on the process target film (S 100 ), fine line patterns are formed in the third film through a fine-pattern-forming resist film while using the second film as an etching stopper (S 102 ), and the fine-pattern-forming resist film is removed (S 104 ). Subsequently, light exposure is carried out using a resist film (S 106 to S 110 ), and the second film, the first film and the process target film are then selectively dry-etched in a sequential manner, to thereby form the process target film into a predetermined pattern (S 112 ). The first film remained on the process target film is then removed (S 114 ).
1. A method of manufacturing a semiconductor device including a step of forming a predetermined pattern in a process target film formed on or over a semiconductor substrate, said method comprising:
a step of forming, on said process target film, a stacked hard mask film having a first film, a second film and a third film stacked therein in this order;
a step of selectively dry-etching said third film through a first resist film having a first pattern used as a mask, while making use of said second film as an etching stopper, to thereby form said first pattern in said third film;
a step of removing said first resist film;
a step of forming, after removal of said first resist film, a second resist film having a second pattern on said stacked hard mask film and then selectively dry-etching said stacked hard mask film and said process target film in this order, while making use of said second resist film as a mask, to thereby form said process target film into said predetermined pattern; and
a step of removing, after formation of said process target film into said predetermined pattern, said first film remained on said process target film.
2. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said step of forming said process target film into said predetermined pattern, through said second resist film used as a mask further comprises:
a step of selectively dry-etching said second film through said third film and said second resist film used as masks, to thereby form said second film into said predetermined pattern; and
a step of selectively dry-etching said first film and said process target film in this order through said second film used as a mask, to thereby form said process target film into said predetermined pattern.
3. The method of manufacturing a semiconductor device as claimed in claim 1 , further comprising, as being provided between said step of removing said first resist film and said step of forming said process target film into said predetermined pattern,
a step of forming, on said stacked hard mask film, a third resist film having a third pattern for removing a part of said first pattern formed in said third film, and further selectively dry-etching said third film through said third resist film used as a mask, while making use of said second film as an etching stopper film; and
a step of removing said third resist film.
4. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said second pattern has a region overlapped with said first pattern in a plan view.
5. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said first film is a carbon-base film.
6. The method of manufacturing a semiconductor device as claimed in claim 5 ,
wherein, in said step of removing said first film, said first film is removed by ashing.
7. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said first film is composed of an amorphous carbon.
8. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said predetermined pattern includes a plurality of gate patterns.
9. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said step of forming said first pattern in said third film further comprises:
a step of forming a resist film on said stacked hard mask film; and
a step of forming said first resist film using a Levenson-type PSM having said first pattern.