Deep diffused thin photodiodes
View Patent ↗This invention comprises photodiodes, optionally organized in the form of an array, including p+ deep diffused regions or p+ and n+ deep diffused regions. More specifically, the invention permits one to fabricate thin 4 inch and 6 inch wafer using the physical support provided by a n+ deep diffused layer and/or p+ deep diffused layer. Consequently, the present invention delivers high device performances, such as low crosstalk, low radiation damage, high speed, low leakage dark current, and high speed, using a thin active layer.
1. A photodiode comprising:
a substrate with at least a front side and a back side;
a passivation layer proximate to the front side;
an active high resistivity layer proximate to said passivation layer comprising at least five regions of alternating conductivity type;
an n+ deep drive in layer proximate to the active high resistivity layer;
an anti-reflective layer proximate to said n+ deep drive in layer; and
a plurality of contact electrodes in electrical communication with each of said five regions of alternating conductivity type;
wherein the five regions of alternating conductivity type comprises a first n+ region adjacent to a first deep diffused p+ region adjacent to a second n+ region adjacent to a second deep diffused p+ region adjacent to a third n+ region and wherein the five regions of alternating conductivity type comprise a thickness of approximately 40 μm.
2. The photodiode of claim 1 wherein the n+ deep drive in layer comprises a thickness of approximately 40 μm.
3. A photodiode comprising:
a substrate with at least a front side and a back side;
a passivation layer proximate to the front side;
an active high resistivity layer proximate to said passivation layer comprising at least five regions of alternating conductivity type;
an n+ deep drive in layer proximate to the active high resistivity layer;
an anti-reflective layer proximate to said n+ deep drive in layer; and
a plurality of contact electrodes in electrical communication with each of said five regions of alternating conductivity type;
wherein the five regions of alternating conductivity type comprises a first deep diffused n+ region adjacent to a first deep diffused p+ region adjacent to a second deep diffused n+ region adjacent to a second deep diffused p+ region adjacent to a third deep diffused n+ region and wherein the five regions of alternating conductivity type comprise a thickness of approximately 140 μm to 200 μm.
4. The photodiode of claim 3 wherein the n+ deep drive in layer comprises a thickness of approximately 0.5 μm.
5. The photodiode of claim 3 wherein the n+ deep drive in layer comprises a n+ concentration of approximately 10 16 .
6. The photodiode of claim 3 wherein the n+ deep drive-in layer comprises a n+ concentration of approximately 10 16 to 10 19 .