Method of fabricating vertical devices using a metal support film
View Patent ↗A vertical topology device includes a conductive adhesion structure having a first surface and a second surface, a conductive thick film support formed on the first surface, and a semiconductive device having an upper electrical contact and located over the conductive adhesion layer. Electrical current can flow between the conductive thick film and the upper electrical contact.
1. A method of producing light emitting devices, comprising: forming a plurality of semiconductor layers over a substrate; forming trenches into the semiconductor layers, wherein the trenches define individual devices; removing the substrate from the semiconductor layers; forming a reflective structure over the semiconductor layers, wherein the reflective structure is configured to reflect light from the semiconductor layers; providing a conductive support structure over the reflective structure; forming openings at the conductive support structure, the openings defining individual conductive supports, wherein the openings are substantially aligned with the trenches; and separating the devices with conductive support.
2. The method of claim 1 , wherein providing the conductive support structure includes forming a support layer over the reflective structure.
3. The method of claim 1 , wherein the conductive support structure includes at least one of Cu, Au, or Al.
4. The method of claim 1 , wherein the reflective structure includes at least one of titanium and aluminum.
5. The method of claim 1 further comprising forming an adhesion structure over the reflective structure.
6. The method of claim 5 , wherein the adhesion structure includes at least one of Cr and Au.
7. The method of claim 5 , wherein the adhesion structure is multilayer.
8. The method of claim 1 , wherein the conductive support structure is less than about 100 microns thick.
9. The method of claim 1 , wherein the conductive support structure comprises at least one of Cu, Au, and Al.
10. The method of claim 1 , wherein removing the substrate from the semiconductor layers is performed after forming the trenches.
11. The method of claim 1 , wherein providing the conductive support structure is performed after removing the substrate from the semiconductor layers.
12. The method of claim 1 further comprising: providing a temporary support structure over the semiconductor layers.
13. The method of claim 12 , wherein providing the temporary support structure is performed after forming the trenches.
14. The method of claim 12 , wherein providing the temporary support structure comprises forming a photo-resist layer over the semiconductor layers.
15. The method of claim 12 , wherein providing the temporary support structure is performed by using an epoxy adhesive.
16. The method of claim 1 , wherein separating the devices is performed by applying stress at the trenches.
17. The method of claim 1 , wherein separating the devices is performed by applying stress at the aligned portions of the openings and the trenches.
18. The method of claim 1 , wherein forming the trenches are performed by using a dry etching method.
19. The method of claim 1 , wherein the dry etching method is inductively coupled plasma reactive ion etching (ICP RIE).
20. The method of claim 1 , wherein forming the openings at the conductive support structure is performed by etching the conductive support structure.
21. The method of claim 1 , wherein the conductive support structure comprises a thermally conductive material.
22. The method of claim 1 , wherein the conductive support structure comprises an electrically conductive material.
23. The method of claim 1 , wherein the reflective structure also serves as an electrode.
24. The method of claim 1 , wherein the reflective structure comprises:
an ohmic contact; and
a reflective layer over the ohmic contact.
25. The method of claim 1 , wherein the reflective structure is further configured to reflect light back into and through the semiconductor layers.