IP Library Granted Patent US 7,846,771
Granted Patent B2
US 7,846,771 · App. 12/166,293 · Granted Dec 7, 2010

Carrier for stacked type semiconductor device and method of fabricating stacked type semiconductor devices

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Quick Facts
Patent No.
US 7,846,771
App. No.
12/166,293
Filed
Jul 1, 2008
Granted
Dec 7, 2010
Kind
B2
Art Unit
2826
USPC
438/109
Abstract

A carrier for a stacked-type semiconductor device includes an accommodating section for accommodating stacked semiconductor devices, guide portions guiding the stacked semiconductor devices, and grooves through which a fluid may flow to the accommodating section and to sides of the stacked semiconductor devices. These grooves facilitate the flow of gas or liquid on the sides of the accommodating sections, and it is thus expected that the flow of hot wind during the reflow process and cleaning liquid during the cleaning process can be facilitated. This improves the production yield and the cleaning effects. Holes for connecting the accommodating section to the outside may be provided at corners of the accommodating section. Gas may be guided from the lower side of the accommodating section, so that heat can be efficiently applied to the semiconductor devices and bonding failures therebetween can be reduced. Further, grooves connecting adjacent holes may be provided for accommodating sections adjacent to each other.

Claims (4)

1. A method for assembling a stacked-type semiconductor device comprising the steps of:

stacking first and second semiconductor devices in an accommodating section of a carrier having guide portions guiding the first and second semiconductor devices; and

bonding the first and second semiconductor devices by reflow during which a fluid is applied to the accommodating section and the sides of the first and second semiconductor devices through grooves of the carrier, the grooves connecting with the accommodating section of the carrier.

2. The method as claimed in claim 1 , further comprising the step of cleaning bonding portions of the first and second semiconductor devices through the grooves.