IP Library › Granted Patent US 7,888,258
Granted Patent B2
US 7,888,258 · App. 12/143,921 · Granted Feb 15, 2011

Forming method of electrode and manufacturing method of semiconductor device

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Quick Facts
Patent No.
US 7,888,258
App. No.
12/143,921
Filed
Jun 23, 2008
Granted
Feb 15, 2011
Kind
B2
Art Unit
2812
USPC
438/612
Abstract

A forming method of an electrode includes the steps of providing an electrode material on a conductive part; exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in an oxidizing atmosphere; and exposing the melted electrode material, in a reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.

Claims (20)

1. A manufacturing method of a semiconductor device, comprising the steps of:

providing an electrode material on a conductive part provided on a semiconductor substrate;

exposing the electrode material in a first reducing atmosphere before the electrode material is exposed in an oxidizing atmosphere;

discharging the first reducing atmosphere before the electrode material is exposed in the oxidizing atmosphere;

exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in the oxidizing atmosphere; and

exposing the melted electrode material, in a second reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.

2. The manufacturing method of the semiconductor device as claimed in claim 1 ,

wherein the reducing atmosphere includes formic acid gas.

3. The manufacturing method of the semiconductor device as claimed in claim 2 ,

wherein the oxidizing atmosphere is generated by thermal decomposition of the formic acid gas.

4. The manufacturing method of the semiconductor device as claimed in claim 3 ,

wherein thermal decomposition of the formic acid gas is performed where the formic acid gas is entrapped.

5. The manufacturing method of the semiconductor device as claimed in claim 1 ,

wherein the oxidizing atmosphere includes moisture.

6. The manufacturing method of the semiconductor device as claimed in claim 5 ,

wherein the oxidizing atmosphere includes inactive gas.

7. The manufacturing method of the semiconductor device as claimed in claim 1 ,

wherein the electrode material includes metal having a low melting point.

8. The manufacturing method of the semiconductor device as claimed in claim 1 ,

wherein the electrode material includes solder.