Methods of programming and erasing resistive memory devices
View Patent ↗In a first method of writing data to a resistive memory device (i.e. programming or erasing), successive electrical potentials are applied across the resistive memory device, wherein the successive electrical potentials are of increasing duration. In another method of writing data to a resistive memory device (i.e. programming or erasing), an electrical potential is applied across the resistive memory device, and the level of current through the memory device is sensed as the electrical potential is applied. The application of the electrical potential is ended based on a selected level of current through the resistive memory device.
1. A method of writing data to a resistive memory device comprising:
applying successive electrical potentials across the resistive memory device, wherein the successive electrical potentials are of increasing duration.
2. The method of claim 1 and further comprising applying the minimum number of successive electrical potentials across the resistive memory device to erase the resistive memory device.
3. The method of claim 1 wherein each electrical potential is of constant magnitude during its duration.
4. The method of claim 1 wherein each electrical potential changes in magnitude during its duration.
5. The method of claim 4 wherein each electrical potential increases in magnitude during its duration.
6. The method of claim 5 wherein each successive electrical potential after the initial electrical potential has a portion of greater magnitude than the greatest magnitude of the immediately preceding electrical potential.
7. The method of claim 2 and further comprising sensing the state of the resistive memory device after each application of electrical potential of successive increasing electrical potentials to the resistive memory device.
8. The method of claim 1 wherein the successive increasing potentials are pulsed electrical potentials.
9. The method of claim 1 wherein the resistive memory device comprises first and second electrodes, and an insulating layer between and in contact with the first and second electrodes.
10. The method of claim 1 wherein the writing of data is a programming step.
11. The method of claim 1 wherein the writing of data is an erase step.
12. A method of writing data to a resistive memory device comprising:
applying successive electrical potentials across the resistive memory device, wherein each electrical potential changes in magnitude during its duration.
13. The method of claim 12 and further comprising applying the minimum number of successive electrical potentials across the resistive memory device to erase the resistive memory device.
14. The method of claim 12 wherein each electrical potential increases in magnitude during its duration.
15. The method of claim 12 wherein each successive electrical potential after the initial electrical potential has a portion of greater magnitude than the greatest magnitude of the immediately preceding electrical potential.
16. The method of claim 12 and further comprising sensing the state of the resistive memory device after each application of electrical potential of successive increasing electrical potentials to the resistive memory device.
17. The method of claim 12 wherein the successive increasing electrical potentials are pulsed electrical potentials.
18. The method of claim 12 wherein the resistive memory device comprises first and second electrodes, and an insulating layer between and in contact with the first and second electrodes.
19. The method of claim 12 wherein the writing of data is a programming step.
20. The method of claim 12 wherein the writing of data is an erase step.
21. A method of writing data to a resistive memory device comprising:
applying an electrical potential across the resistive memory device;
sensing the level of current through the memory device as the electrical potential is applied; and
ending the application of the electrical potential based on a selected level of current through the resistive memory device.
22. The method of claim 21 wherein the application of the electrical potential ends substantially immediately after the selected level of current is sensed.
23. The method of claim 21 wherein the writing of data is a programming step.
24. The method of claim 21 wherein the writing of data is an erase step.
25. The method of claim 21 wherein the resistive memory device comprises first and second electrodes, and an insulating layer between and in contact with the first and second electrodes.
26. The method of claim 1 and further comprising said memory device incorporated in a system.
27. The method of claim 26 wherein the system is selected from the group consisting of a hand-held device, a vehicle, and a computer.