IP Library › Granted Patent US 7,957,205
Granted Patent B2
US 7,957,205 · App. 12/574,413 · Granted Jun 7, 2011

Semiconductor device and control method of the same

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Quick Facts
Patent No.
US 7,957,205
App. No.
12/574,413
Filed
Oct 6, 2009
Granted
Jun 7, 2011
Kind
B2
Examiner
YANG, HAN
Art Unit
2824
USPC
365/189.09
Abstract

The present invention is a semiconductor device including: a resistor R 11 (first resistor part) and an FET 15 (second resistor part) connected in series between a power supply Vcc (first power supply) and ground (second power supply); an output node N 11 provided between the resistor R 11 and FET 15 and used for outputting a reference voltage; a feedback node N 12 provided between the power supply Vcc and the ground; and a voltage control circuit ( 19 ) that maintains a voltage of the feedback node N 12 at a constant level by using the reference voltage of the output node N 11 and the voltage of the feedback node N 12 . The present invention can provide a semiconductor device having a reference voltage generating circuit capable of generating the reference voltage that does not greatly depend on a power supply voltage and its control method.

Claims (14)

1. A wireless communications device, said wireless communications device comprising:

a flash memory comprising:

first and second resistor parts connected in series between a first power supply and a second power supply;

an output node provided between the first and second resistor parts, a reference voltage being output via the output node;

a feedback node provided between the first power supply and the first resistor part wherein the feedback node comprises a node that couples first and second transistors; and

a voltage control circuit that maintains a voltage of the feedback node at a constant level by using the reference voltage of the output node and the voltage of the feedback node;

a processor;

a communications component;

a transmitter;

a receiver; and

an antenna connected to the transmitter circuit and the receiver circuit.

2. The wireless communications device of claim 1 , wherein said flash memory is NAND flash memory.

3. The wireless communications device of claim 1 , wherein said flash memory is NOR flash memory.

4. The wireless communications device of claim 1 , wherein said flash memory utilizes mirrorbits technology.