Semiconductor device and manufacturing method of the same
View Patent ↗A disclosed semiconductor device includes multiple gate electrodes disposed on a semiconductor substrate; and multiple sidewall spacers disposed on sidewalls of the gate electrodes. The thickness of the sidewall spacers is larger on the sidewalls along longer sides of the gate electrodes than on the sidewalls along shorter sides of the gate electrodes.
1. A method for manufacturing a semiconductor device comprising:
forming a gate electrode material film over a semiconductor substrate;
performing patterning on the gate electrode material film to form a linear pattern;
forming first sidewall spacers along longer sides of the linear pattern; and
cutting the linear pattern along a shorter side of the linear pattern at one or more predetermined positions so as to form a plurality of gate electrodes.
2. The method as claimed in claim 1 , further comprising implanting an impurity into the semiconductor substrate to form a source and drain region after the formation of the first sidewall spacers and before the formation of the gate electrodes.
3. The method as claimed in claim 1 , wherein in the formation of the gate electrodes, both the linear pattern and the first sidewall spacers are cut.
4. The semiconductor device manufacturing method as claimed in claim 2 , wherein in the formation of the gate electrodes, both the linear pattern and the first sidewall spacers are cut.
5. The method as claimed in claim 1 , wherein in the formation of the gate electrodes, the first sidewall spacers are left continuous and the linear pattern is cut.
6. The method as claimed in claim 2 , wherein in the formation of the gate electrodes, the first sidewall spacers are left continuous and the linear pattern is cut.
7. The method as claimed in claim 1 , further comprising forming a pocket region and/or an extension region along the longer sides of the linear pattern before the formation of the first sidewall spacers.
8. The method as claimed in claim 1 , further comprising forming second sidewall spacers along the longer sides and shorter sides of the gate electrodes, thickness of each of the second sidewall spacers being smaller than thickness of each of the first sidewall spacers.
9. The method as claimed in claim 8 , wherein the thickness of each of the second sidewall spacers is between 5 nm and 20 nm.
10. The method as claimed in claim 8 , further comprising performing a silicide process so as to form a metal silicide over the gate electrodes and the source and drain region after the formation of the second sidewall spacers.
11. The method as claimed in claim 9 , further comprising performing a silicide process so as to form a metal silicide over the gate electrodes and the source and drain region after the formation of the second sidewall spacers.
12. The method as claimed in claim 1 , wherein the semiconductor device is a static random access memory.
13. The method as claimed in claim 1 , wherein the thickness of each of the first sidewall spacers is between 30 nm and 80 nm.