Semiconductor device and method of mounting pre-fabricated shielding frame over semiconductor die

1. A method of manufacturing a semiconductor device, comprising:

providing a pre-fabricated shielding frame;

providing a sacrificial substrate;

mounting a semiconductor die to the sacrificial substrate;

mounting the shielding frame over the semiconductor die and sacrificial substrate;

depositing an encapsulant through the shielding frame around the semiconductor die;

removing a first portion of the shielding frame to expose the encapsulant, wherein removing the first portion of the shielding frame leaves a second portion of the shielding frame over the semiconductor die as shielding from interference;

forming a first interconnect structure over the semiconductor die, second portion of the shielding frame, and a first side of the encapsulant;

removing the sacrificial substrate; and

forming a second interconnect structure over the semiconductor die and a second side of the encapsulant opposite the first side of the encapsulant.

2. The method of claim 1 , wherein removing the first portion of the shielding frame leaves a third portion of the shielding frame around the semiconductor die which provides a conductive pillar electrically connected between the first and second interconnect structures.

3. The method of claim 2 , further including:

stacking a plurality of the semiconductor devices; and

electrically connecting the stacked semiconductor devices through the conductive pillar.

4. The method of claim 1 , further including providing an opening through the shielding frame to disperse the encapsulant into cavities below the shielding frame.

5. The method of claim 1 , further forming a through silicon via in the semiconductor die to ground the shielding frame.

6. The method of claim 1 , further including forming a bond wire between contacts pads of the semiconductor die and the second interconnect structure.

7. The method of claim 1 , further including forming a shielding layer around the semiconductor die between the first and second interconnect structures.

8. A method of manufacturing a semiconductor device, comprising:

providing a pre-fabricated shielding frame;

providing a sacrificial substrate;

mounting a semiconductor die to the sacrificial substrate;

mounting the shielding frame over the semiconductor die and sacrificial substrate;

depositing an encapsulant through the shielding frame around the semiconductor die;

removing a first portion of the shielding frame to expose the encapsulant, wherein removing the first portion of the shielding frame leaves a second portion of the shielding frame over the semiconductor die as shielding from interference; and

forming a first interconnect structure over the semiconductor die, second portion of the shielding frame, and a first side of the encapsulant.

9. The method of claim 8 , further including forming a second interconnect structure over the semiconductor die and a second side of the encapsulant opposite the first side of the encapsulant.

10. The method of claim 9 , further including forming a shielding layer around the semiconductor die between the first and second interconnect structures.

11. The method of claim 9 , wherein removing the first portion of the shielding frame leaves a third portion of the shielding frame around the semiconductor die which provides a conductive pillar connected between the first and second interconnect structures.

12. The method of claim 11 , further including:

stacking a plurality of the semiconductor devices; and

electrically connecting the stacked semiconductor devices through the conductive pillar.

13. The method of claim 8 , further including providing an opening through the shielding frame to disperse the encapsulant into cavities below the shielding frame.

14. The method of claim 8 , further forming a through silicon via in the semiconductor die to ground the shielding frame.

15. A method of manufacturing a semiconductor device, comprising:

providing a pre-fabricated shielding frame;

mounting the shielding frame over a semiconductor die;

depositing an encapsulant through the shielding frame around the semiconductor die; and

removing a first portion of the shielding frame to expose the encapsulant while leaving a second portion of the shielding frame over the semiconductor die.

16. The method of claim 15 , further including:

forming a first interconnect structure over the semiconductor die, second portion of the shielding frame, and a first side of the encapsulant; and

forming a second interconnect structure over the semiconductor die and a second side of the encapsulant opposite the first side of the encapsulant.

17. The method of claim 15 , wherein removing the first portion of the shielding frame leaves a third portion of the shielding frame around the semiconductor die which provides a conductive pillar.

18. The method of claim 17 , further including:

stacking a plurality of the semiconductor devices; and

electrically connecting the stacked semiconductor devices through the conductive pillar.

19. The method of claim 15 , further including providing an opening through the shielding frame to disperse the encapsulant into cavities below the shielding frame.

20. The method of claim 15 , further forming a through silicon via in the semiconductor die to ground the shielding frame.