Method for manufacture of integrated circuit package system with protected conductive layers for pads

1. A method for manufacture of an integrated circuit package system comprising:

providing an integrated circuit die having a contact pad;

forming a protection cover over the contact pad;

forming a passivation layer having a first opening over the protection cover with the first opening exposing the protection cover;

developing a conductive layer over the passivation layer;

forming a pad opening in the protection cover for exposing the contact pad having the conductive layer partially removed; and

forming an interconnect directly on the contact pad and only adjacent to the protection cover and the passivation layer.

2. The method as claimed in claim 1 further comprising forming a circuit element over the integrated circuit die.

3. The method as claimed in claim 1 wherein forming the pad opening in the protection cover includes providing the protection cover having a higher etching selectivity compared to the passivation layer.

4. The method as claimed in claim 1 wherein forming the protection cover over the contact pad includes protecting the contact pad from chemicals used for developing the conductive layer.

5. The method as claimed in claim 1 further comprising forming an interconnect over the conductive layer and the contact pad exposed in the pad opening.

6. A method for manufacture of an integrated circuit package system comprising:

providing an integrated circuit die having a contact pad;

forming a protection cover over the contact pad;

forming a passivation layer having a first opening over the protection cover with the first opening exposing the protection cover;

developing a conductive layer over the passivation layer with the protection cover protecting the contact pad from chemicals used for developing the conductive layer;

forming a first interconnect over the conductive layer;

forming a pad opening in the protection cover for exposing the contact pad; and

forming a second interconnect directly on the contact pad and only adjacent to the protection cover and the passivation layer.

7. The method as claimed in claim 6 wherein forming the protection cover over the contact pad includes forming the protection cover comprised of a resistive layer having a lower etching selectivity than the conductive layer.

8. The method as claimed in claim 6 wherein forming the protection cover over the contact pad includes forming the protection cover comprised of an insulator layer having a lower etching selectivity than the conductive layer.

9. The method as claimed in claim 6 wherein forming the pad opening in the protection cover includes the protection cover having a higher etching selectivity than the passivation layer.

10. The method as claimed in claim 6 wherein developing the conductive layer includes etching the conductive layer.