Semiconductor package with semiconductor core structure and method of forming same
View Patent ↗A semiconductor device includes an IPD structure, a first semiconductor die mounted to the IPD structure with a flipchip interconnect, and a plurality of first conductive posts that are disposed adjacent to the first semiconductor die. The semiconductor device further includes a first molding compound that is disposed over the first conductive posts and first semiconductor die, a core structure bonded to the first conductive posts over the first semiconductor die, and a plurality of conductive TSVs disposed in the core structure. The semiconductor device further includes a plurality of second conductive posts that are disposed over the core structure, a second semiconductor die mounted over the core structure, and a second molding compound disposed over the second conductive posts and the second semiconductor die. The second semiconductor die is electrically connected to the core structure.
1. A method of making a semiconductor device, comprising:
forming an integrated passive device (IPD) structure within the semiconductor device, the IPD structure including an inductor;
mounting a first semiconductor die over a portion of the IPD structure with the inductor disposed outside a footprint of the first semiconductor die;
depositing a first encapsulant over the first semiconductor die and IPD structure with a thickness of the first encapsulant over the inductor being greater than 50 micrometers; and
mounting a pre-fabricated semiconductor core, including an interconnect structure formed through the pre-fabricated semiconductor core, over a surface of the first encapsulant opposite the IPD structure.
2. The method of claim 1 , further including mounting a second semiconductor die over the semiconductor core.
3. The method of claim 2 , further including depositing a second encapsulant over the second semiconductor die and semiconductor core.
4. The method of claim 3 , further including:
forming a first interconnect structure over the second encapsulant; and
forming a second interconnect structure over the IPD structure.
5. The method of claim 1 , further including forming a plurality of conductive posts through the first encapsulant between the IPD structure and semiconductor core.
6. The method of claim 1 , further including disposing a dummy die within the first encapsulant over the inductor.
7. A method of making a semiconductor device, comprising:
forming an integrated passive device (IPD) structure within the semiconductor device, the IPD structure including an inductor;
mounting a first semiconductor die over a portion of the IPD structure with the inductor disposed outside a footprint of the first semiconductor die;
depositing a low-loss first encapsulant over the first semiconductor die and IPD structure; and
mounting a lossy semiconductor core, including an interconnect structure formed through the lossy semiconductor core, over a surface of the low-loss first encapsulant opposite the IPD structure.
8. The method of claim 7 , wherein the low-loss first encapsulant includes a loss tangent less than 0.01 and thickness over the inductor greater than 50 micrometers.
9. The method of claim 7 , further including forming a cavity in the lossy semiconductor core and disposed over the inductor.
10. The method of claim 7 , further including:
forming a plurality of vias in the lossy semiconductor core; and
forming a conductive material in the vias.
11. The method of claim 7 , further including:
mounting a second semiconductor die over the lossy semiconductor core; and
depositing a second encapsulant over the second semiconductor die and lossy semiconductor core.
12. The method of claim 11 , further including:
forming a first interconnect structure over the second encapsulant; and
forming a second interconnect structure over the IPD structure.
13. The method of claim 7 , further including disposing a dummy die within the low-loss first encapsulant over the inductor.
14. The method of claim 7 , further including forming a plurality of conductive posts through the low-loss first encapsulant between the IPD structure and lossy semiconductor core.
15. A method of making a semiconductor device, comprising:
forming an integrated passive device (IPD) structure within the semiconductor device;
mounting a first semiconductor die over a first portion of the IPD structure with a second portion of the IPD structure including an inductor disposed outside a footprint of the first semiconductor die;
depositing a first encapsulant over the first semiconductor die and IPD structure; and
mounting a pre-fabricated semiconductor core, including an interconnect structure formed through the pre-fabricated semiconductor core, over a surface of the first encapsulant opposite the IPD structure.
16. The method of claim 15 , wherein the first encapsulant includes a loss tangent less than 0.01 and thickness over the inductor greater than 50 micrometers.
17. The method of claim 15 , further including forming a cavity in the semiconductor core and disposed over the inductor.
18. The method of claim 15 , further including disposing a dummy die within the first encapsulant over the inductor.
19. The method of claim 15 , further including:
forming a plurality of vias in the semiconductor core; and
forming a conductive material in the vias.
20. The method of claim 15 , further including mounting a second semiconductor die over the semiconductor core.
21. The method of claim 20 , further including depositing a second encapsulant over the second semiconductor die and semiconductor core.
22. The method of claim 21 , further including:
forming a first interconnect structure over the second encapsulant; and
forming a second interconnect structure over the IPD structure.
23. The method of claim 15 , further including forming a plurality of conductive posts through the first encapsulant between the IPD structure and semiconductor core.
24. The method of claim 15 , further including removing a portion of the semiconductor core to reduce a thickness of the semiconductor core.
25. A semiconductor device, comprising:
an integrated passive device (IPD) structure within the semiconductor device;
a first semiconductor die mounted over a first portion of the IPD structure with a second portion of the IPD structure including an inductor disposed outside a footprint of the first semiconductor die;
a first encapsulant including a loss tangent less than 0.01 deposited over the first semiconductor die and IPD structure; and
a lossy semiconductor core, including an interconnect structure formed through the lossy semiconductor core, mounted over a surface of the first encapsulant opposite the IPD structure.
26. The semiconductor device of claim 25 , wherein the semiconductor core includes a cavity disposed over the inductor.
27. The semiconductor device of claim 25 , wherein the first encapsulant includes a thickness over the inductor greater than 50 micrometers.
28. The semiconductor device of claim 25 , further including:
a second semiconductor die mounted over the semiconductor core; and
a second encapsulant deposited over the semiconductor core and second semiconductor die.