IP Library Granted Patent US 8,531,802
Granted Patent B2
US 8,531,802 · App. 12/972,182 · Granted Sep 10, 2013

Magnetic structure free layer stabilization

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Quick Facts
Patent No.
US 8,531,802
App. No.
12/972,182
Filed
Dec 17, 2010
Granted
Sep 10, 2013
Kind
B2
Art Unit
2688
USPC
360/324.12
Abstract

A magnetic layered structure is presently disclosed comprising a pinned layer, a first anti-ferromagnetic layer that defines a magnetic orientation of the pinned layer, a free layer, a second anti-ferromagnetic layer that biases the free layer to a magnetic orientation approximately perpendicular to the magnetic orientation of the pinned layer, and a tuning layer positioned between and in contact with the second anti-ferromagnetic layer and the free layer that tunes free layer bias to a desired level.

Claims (43)

1. A magnetic layered structure comprising:

a pinned layer;

a first anti-ferromagnetic layer that defines a magnetic orientation of the pinned layer;

a free layer;

a second anti-ferromagnetic layer and a third anti-ferromagnetic layer that bias the free layer to a magnetic orientation approximately perpendicular to the magnetic orientation of the pinned layer; and

a tuning layer that tunes free layer bias to a desired level and is separated from the free layer and positioned between the second anti-ferromagnetic layer and the third anti-ferromagnetic layer.

2. The magnetic layered structure of claim 1 , further comprising:

one or more side shields positioned adjacent the free layer along a major plane of the free layer.

3. The magnetic layered structure of claim 2 , wherein the side shields include a soft magnetic material.

4. The magnetic layered structure of claim 2 , wherein the side shields include a non-magnetic material.

5. The magnetic layered structure of claim 1 , further comprising:

two electrodes, each positioned on opposite sides of the layered structure, configured to conduct current through the layered structure along an axis approximately perpendicular to a major plane of the free layer.

6. The magnetic layered structure of claim 1 , further comprising:

a spacer layer that magnetically separates the pinned layer from the free layer.

7. The magnetic layered structure of claim 1 , further comprising:

a capping layer that protects the second anti-ferromagnetic layer from post deposition damage.

8. The magnetic layered structure of claim 1 , wherein the pinned layer, first anti-ferromagnetic layer, free layer, and second anti-ferromagnetic layer comprise a read element sensor.

9. The magnetic layered structure of claim 1 , wherein approximately perpendicular is perpendicular +/−15 degrees.

10. The magnetic layered structure of claim 1 , wherein the first and second anti-ferromagnetic layers comprise IrMn or PtMn and have a thickness greater than or equal to 30 Å and less than or equal to 250 Å.

11. The magnetic layered structure of claim 1 , wherein the free layer comprises a first free layer and a second free layer.

12. The magnetic layered structure of claim 1 , wherein the structure further comprises multiple spacer layers including at least one of soft magnetic or nonmagnetic material to increase pinning field strength.

13. The magnetic layered structure of claim 1 , wherein the tuning layer decouples the free layer and the second anti-ferromagnetic layer while reducing dispersion of a free layer magnetic moment.

14. A method of biasing a magnetic layered structure, comprising:

defining a magnetic orientation of a pinned layer using a first anti-ferromagnetic layer;

biasing a magnetic orientation of a free layer using a second anti-ferromagnetic layer and a third anti-ferromagnetic layer, wherein the defined magnetic orientation of the pinned layer is approximately perpendicular to the biased magnetic orientation of the free layer; and

tuning free layer bias to a desired level using a tuning layer that decouples the free layer and the second anti-ferromagnetic layer wherein the tuning layer is separated from the free layer and positioned between the second anti-ferromagnetic layer and the third anti-ferromagnetic layer.

15. The method of claim 14 , further comprising:

shielding the free layer from external electromagnetic and/or thermal interference using one or more side shields positioned adjacent the free layer along a major plane of the free layer.

16. The method of claim 14 , further comprising:

conducting current along an axis approximately perpendicular to a major plane of the free layer between two electrodes positioned on opposite sides of the first anti-ferromagnetic layer, pinned layer, free layer, and second anti-ferromagnetic layer.

17. The method of claim 14 , further comprising:

decoupling the free layer and the second anti-ferromagnetic layer while reducing dispersion of a free layer magnetic moment.

18. The method of claim 14 , further comprising:

decoupling the free layer and the second anti-ferromagnetic layer while reducing dispersion of a free layer magnetic moment.

19. A transducer for a magnetic disc drive comprising:

a reader, including

a pinned layer;

a first anti-ferromagnetic layer that defines a magnetic orientation of the pinned layer;

a free layer;

a second anti-ferromagnetic layer and a third anti-ferromagnetic layer that bias the free layer to a magnetic orientation approximately perpendicular to the magnetic orientation of the pinned layer; and

a tuning layer that tunes free layer bias to a desired level, wherein the tuning layer is separated from the free layer and positioned between the second anti-ferromagnetic layer and the third antiferromagnetic layer.

20. The transducer of claim 19 , wherein the reader further includes one or more side shields positioned adjacent the free layer along a major plane of the free layer that shields the free layer from external electromagnetic interference.

21. The transducer of claim 19 , wherein the reader further includes two electrodes, each positioned on opposite sides of the layered structure, configured to conduct current through the layered structure along an axis approximately perpendicular to a major plane of the free layer.