IP Library › Granted Patent US 8,599,346
Granted Patent B2
US 8,599,346 · App. 12/938,524 · Granted Dec 3, 2013

Image display device and manufacturing method thereof

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Quick Facts
Patent No.
US 8,599,346
App. No.
12/938,524
Filed
Nov 3, 2010
Granted
Dec 3, 2013
Kind
B2
Art Unit
2871
USPC
349/138
Abstract

Provided is an image display device including: a resin member; a TFT circuit layer formed above the resin member; and an inorganic film formed on a surface of the resin member to be formed between the resin member and the TFT circuit layer, in which the inorganic film has a stress acting thereon, the stress being, at a glass transition point (Tg) of the resin member, in the range of equal to or higher than −300 MPa to equal to or lower than 200 MPa, while, at a room temperature, in the range of equal to or higher than −400 MPa to equal to or lower than 50 MPa.

Claims (10)

1. An image display device, comprising:

a resin member;

a TFT circuit layer formed above the resin member; and

an inorganic film formed on a surface of the resin member to be formed between the resin member and the TFT circuit layer,

wherein the image display device is configured so that the inorganic film has a stress acting thereon, and the inorganic film has a configuration so that the stress, at a glass transition point (Tg) of the resin member, is in a range of equal to or higher than −300 MPa to equal to or lower than 200 MPa, and at a room temperature, is in a range of equal to or higher than −400 MPa to equal to or lower than 50 MPa, so as to substantially prevent occurrence of at least one of a crack and a wrinkle of the inorganic film.

2. The image display device according to claim 1 , wherein the inorganic film comprises a film selected from the group consisting of a silicon oxynitride film, a silicon oxide film, a silicon nitride film, a metal film, a semi-metal film, a metal oxynitride film, a metal oxide film, and a metal nitride film, or a laminate thereof.

3. The image display device according to claim 1 , wherein the room temperature comprises a temperature in a range of 20° C. to 80° C.

4. The image display device according to claim 1 , further comprising a buffer layer formed between the inorganic film and the TFT circuit layer.

5. The image display device according to claim 1 , wherein the image display device comprises a liquid crystal display device.

6. The image display device according to claim 1 , wherein the image display device comprises an organic EL display device.