IP Library Granted Patent US 8,618,891
Granted Patent B2
US 8,618,891 · App. 13/340,790 · Granted Dec 31, 2013

Method and apparatus of a resonant oscillator separately driving two independent functions

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Quick Facts
Patent No.
US 8,618,891
App. No.
13/340,790
Filed
Dec 30, 2011
Granted
Dec 31, 2013
Kind
B2
Art Unit
2843
USPC
331/167
Abstract

Capacitive adjustment in an RCL resonant circuit is typically performed by adjusting a DC voltage being applied to one side of the capacitor. One side of the capacitor is usually connected to either the output node or the gate of a regenerative circuit in an RCL resonant circuit. The capacitance loading the resonant circuit becomes a function of the DC voltage and the AC sinusoidal signal generated by the resonant circuit. By capacitively coupling both nodes of the capacitor, a DC voltage can control the value of the capacitor over the full swing of the output waveform. In addition, instead of the RCL resonant circuit driving a single differential function loading the outputs, each output drives an independent single ended function; thereby providing two simultaneous operations being determined in place of the one differential function.

Claims (64)

1. A PLL (Phase Lock Loop) comprising:

a differential VCO (Voltage Controlled Oscillator) with an output node and an inverse output node;

said inverse output node coupled to an input of a first buffer;

an output of said first buffer coupled to an input of a first function;

an output of said first function coupled to an input of a divide by N;

an output of said divide by N coupled to a first input of a PFD (Phase and Frequency Detect);

a reference frequency coupled to a second input of said PFD;

an output of said PFD coupled to an input of a charge pump;

an output of said charge pump coupled to an input of said differential VCO;

said output node coupled to an input of a second buffer;

an output of said second buffer coupled to a second function;

an output of said first function coupled to an input of a third buffer; and

an output of said second function coupled to an input of a fourth buffer, wherein

an output of said third buffer is in a desired phase separation from an output of said fourth buffer.

2. The PLL, of claim 1 , wherein

said first function performs a first calculation,

said second function performs a second calculation, and

said first calculation is different from said second calculation.

3. The PLL of claim 2 , wherein

said first calculation is a divide by X,

said second calculation is a divide by Y, and

said X is greater than said Y.

4. The PLL of claim 2 , further comprising:

a source and a drain node of a first and a second MOS device connected to a first DC voltage;

a gate of said first MOS device coupled to a second DC voltage by a first impedance;

a gate of said second MOS device coupled to said second DC voltage by a second impedance;

said gate of said first MOS device coupled by a first capacitor to said output node; and

said gate of said second MOS device coupled by a second capacitor to said inverse output node.

5. The PLL of claim 4 , wherein

said first DC voltage and said second DC voltage can be adjusted to adjust a capacitance of said first and said second MOS device.

6. The PLL of claim 5 , wherein

said capacitance of said first and said second MOS device is due to a state selected from the group consisting of inversion, depletion and accumulation.

7. A differential VCO (Voltage Controlled Oscillator) comprising:

an output node and an inverse output node of said differential VCO;

a first interconnect coupling said output node to a first function;

a second interconnect coupling said inverse output node to a second function;

a first interconnect capacitance of said first interconnect;

a second interconnect capacitance of said second interconnect;

a first function capacitance of an input of said first function;

a second function capacitance of an input of said second function, wherein

said first interconnect capacitance or said second interconnect capacitance is adjusted such that a first summation of said first interconnect capacitance and said first function capacitance substantially equals a second summation of said second interconnect capacitance and said second function capacitance; and

an inductor connected between said output node and said inverse output node.

8. The VCO of claim 7 , wherein

said first function performs a first calculation,

said second function performs a second calculation, and

said first calculation is different from said second calculation.

9. The VCO of claim 8 , further comprising:

a source and a drain node of a first and a second MOS device connected to a first DC voltage;

a gate of said first MOS device coupled to a second DC voltage by a first impedance;

a gate of said second MOS device coupled to said second DC voltage by a second impedance;

said gate of said first MOS device coupled by a first capacitor to said output node; and

said gate of said second MOS device coupled by a second capacitor to said inverse output node.

10. The VCO of claim 7 , further comprising:

at least one regenerative circuit coupled to said output node and said inverse output node.

11. A differential VCO (Voltage Controlled Oscillator) comprising:

an output node and an inverse output node of said differential VCO;

a first interconnect coupling said output node to a first function;

a second interconnect coupling said inverse output node to a second function;

a first interconnect capacitance of said first interconnect;

a second interconnect capacitance of said second interconnect;

a first function capacitance of an input of said first function;

a second function capacitance of an input of said second function, wherein

said first interconnect capacitance or said second interconnect capacitance is adjusted such that a first summation of said first interconnect capacitance and said first function capacitance substantially equals a second summation of said second interconnect capacitance and said second function capacitance; and

an adjustment of said first interconnect capacitance and second interconnect capacitance is due to a change in a geometric structure of patterned metal layers in a die.