Deep diffused thin photodiodes
View Patent ↗This invention comprises photodiodes, optionally organized in the form of an array, including p+ deep diffused regions or p+ and n+ deep diffused regions. More specifically, the invention permits one to fabricate thin 4 inch and 6 inch wafer using the physical support provided by a n+ deep diffused layer and/or p+ deep diffused layer. Consequently, the present invention delivers high device performances, such as low crosstalk, low radiation damage, high speed, low leakage dark current, and high speed, using a thin active layer.
1. A photodiode comprising: a substrate with at least a front side and a back side; a passivation layer proximate to the front side; a layer proximate to said passivation layer comprising at least five regions of alternating conductivity types; an active high resistivity layer proximate said at least five regions of alternating conductivity types; an n+ deep drive in layer proximate to the active high resistivity layer; an anti-reflective layer proximate to said n+ deep drive in layer; and a plurality of contact electrodes in electrical communication with each of said five regions of alternating conductivity type, wherein a first one of the alternating conductivity types is n+, wherein a second one of the alternating conductivity types is p+, wherein the regions of p+ alternating conductivity type each have a depletion region associated therewith, and each of said depletion regions extends from said passivation layer up to, but not into, said n+ deep drive in layer.
2. The photodiode of claim 1 wherein the passivation layer comprises SiO 2 /Si 3 N 4 .
3. The photodiode of claim 1 wherein the layer comprises n-type silicon.
4. The photodiode of claim 1 wherein the layer comprises a thickness of approximately 140 μm to 200 μm.
5. The photodiode of claim 1 wherein the n+ deep drive in layer is approximately 10 μm.
6. The photodiode of claim 1 wherein the five regions of alternating conductivity type comprises a first deep diffused n+ region adjacent to a first deep diffused p+ region adjacent to a second deep diffused n+ region adjacent to a second deep diffused p+ region adjacent to a third deep diffused n+ region.
7. The photodiode of claim 6 wherein the five regions of alternating conductivity type comprise a thickness of approximately 140 μm to 200 μm.
8. The photodiode of claim 7 wherein the n+ deep drive in layer comprises a thickness of approximately 0.5 μm.
9. The photodiode of claim 1 wherein the n+ deep drive-in layer comprises a n+ concentration of approximately 10 16 .
10. The photodiode of claim 1 wherein the n+ deep drive-in layer comprises a n+ concentration of approximately 10 16 to 10 19 .
11. A photodiode comprising: a substrate with at least a front side and a back side; a passivation layer proximate to the front side; a layer proximate to said passivation layer comprising at least five regions of alternating conductivity type; an active high resistivity layer proximate the at least five regions of alternating conductivity type; an n+ deep drive in layer proximate to the active high resistivity layer; an anti-reflective layer proximate to said n+ deep drive in layer; and a plurality of contact electrodes in electrical communication with each of said five regions of alternating conductivity type; wherein the five regions of alternating conductivity type comprises a first n+ region adjacent to a first deep diffused p+ region adjacent to a second n+ region adjacent to a second deep diffused p+ region adjacent to a third n+ region, wherein the regions of deep diffused p+ conductivity type each have a depletion region associated therewith, and wherein each of said depletion regions extends from said passivation layer up to, but not into, said n+ deep drive in layer.
12. A photodiode comprising: a substrate with at least a front side and a back side; a passivation layer proximate to the front side; a layer proximate to said passivation layer comprising at least five regions of alternating conductivity type; an active high resistivity layer proximate the at least five regions of alternating conductivity type; an n+ deep drive in layer proximate to the active high resistivity layer; an anti-reflective layer proximate to said n+ deep drive in layer; and a plurality of contact electrodes in electrical communication with each of said five regions of alternating conductivity type; wherein the five regions of alternating conductivity type comprises a first deep diffused n+ region adjacent to a first deep diffused p+ region adjacent to a second deep diffused n+ region adjacent to a second deep diffused p+ region adjacent to a third deep diffused n+ region, wherein the regions of deep diffused p+ conductivity type each have a depletion region associated therewith, wherein each of said depletion regions extends from said passivation layer up to, but not into, said n+ deep drive in layer, and wherein the five regions of alternating conductivity type comprise a thickness of approximately 140 μm to 200 μm.