IP Library › Granted Patent US 9,006,841
Granted Patent B2
US 9,006,841 · App. 13/591,663 · Granted Apr 14, 2015

Dual port SRAM having reduced cell size and rectangular shape

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Quick Facts
Patent No.
US 9,006,841
App. No.
13/591,663
Filed
Aug 22, 2012
Granted
Apr 14, 2015
Kind
B2
Art Unit
2824
USPC
257/1
Abstract

A dual port SRAM has two data storage nodes, a true data and complementary data. A first pull down transistor has an active area that forms the drain region of the first transistor and the true data storage node that is physically isolated from all other transistor active areas of the memory cell. A second pull down transistor has an active area that forms the drain region of a second transistor that is the complementary data node that is physically isolated from all other transistor active areas of the memory cell.

Claims (29)

1. A structure for an SRAM memory cell comprising

a substrate;

a first active area that is physically isolated from all other active areas in the memory cell, the first active area being part of a first data storage node and a drain region of a first transistor;

a second active area that is physically isolated from all other active areas in the memory cell, the second active area being part of a second data storage node and a drain region of a second transistor;

a third active area that is physically isolated from all other active areas in the memory cell, the third active area forming part of the first data storage node and a drain region of a third transistor;

a fourth active area that is physically isolated from all other active areas in the memory cell, the fourth active area being part of the second data storage node and drain region of a fourth transistor;

a fifth active area that is part of the first data storage node and is common physical area shared by a fifth and sixth transistor;

a sixth active area that is part of the second data storage node and is common physical area shared by a seventh and eighth transistor, the first active area at least partially disposed between the third active area and the sixth active area;

a first metal layer that electrically connects the first, third and fifth active areas to form the first data storage node; and

a second metal layer that electrically connects the second, fourth and sixth active areas to form the second data storage node.

2. The SRAM cell of claim 1 further including:

a physical and electrical interconnection from the first metal layer to a gate electrode of the second transistor; and

a physical and electrical interconnection from the second metal layer to a gate electrode of the first transistor.

3. The SRAM cell of claim 2 wherein the first metal layer physically connects to the first, third and fifth active areas.

4. The SRAM cell of claim 1 further including:

a metal row line that is electrically coupled to a gate electrode of the fifth and seventh transistors, respectively; and

a metal row line that is electrically coupled to a gate electrode of the sixth and eighth transistors, respectively.

5. The SRAM cell of claim 1 further including a metal source connection that is electrically coupled to an active area of the first and second transistors, respectively.

6. The SRAM cell of claim 1 wherein the first metal layer is in physical contact with the entire region of the first active area that it overlies.

7. An SRAM memory cell comprising:

a substrate;

a first active area that is physically isolated from all other active areas in the memory cell, the first active area being part of a first data storage node and a drain region of a first transistor;

a second active area that is physically isolated from all other active areas in the memory cell, the second active area being part of a second data storage node and a drain region of a second transistor;

a third active area that is physically isolated from all other active areas in the memory cell, the third active area forming part of the first data storage node and a drain region of a third transistor;

a fourth active area that is physically isolated from all other active areas in the memory cell, the fourth active area being part of the second data storage node and drain region of a fourth transistor;

a fifth active area that is part of the first data storage node and is part of a fifth transistor; and

a sixth active area that is part of the second data storage node and is part of a sixth transistor, the first active area at least partially disposed between the third active area and the sixth active area.

8. The SRAM cell of claim 7 wherein the third active area is at least partially disposed between the first active area and the fifth active area.

9. The SRAM cell of claim 1 wherein the third active area is at least partially disposed between the first active area and the fifth active area.