Method for producing image pickup apparatus, and method for producing semiconductor apparatus
View Patent ↗A method for producing an image pickup apparatus includes: a process of fabricating a plurality of image pickup chips by cutting an image pickup chip substrate where light receiving sections and electrode pads are formed; a process of fabricating a joined wafer by bonding the image pickup chips to a glass wafer; a process of filling a gap between the plurality of image pickup chips with a sealing member; a process of machining the joined wafer to reduce a thickness; a process of forming through-hole vias; a process of forming an insulating layer that covers the image pickup chips; a process of forming through-hole interconnections; a process of forming external connection electrodes, each of which is connected to each of the through-hole interconnections; and a process of cutting the joined wafer.
1. A method for producing an image pickup apparatus comprising:
a process of fabricating a plurality of image pickup chips by cutting an image pickup chip substrate where a plurality of light receiving sections are formed on a first main face and electrode pads are formed around each of the light receiving sections;
a process of fabricating a joined wafer by bonding the first main face of each of the image pickup chips to a transparent support substrate via a transparent adhesive layer;
a process of filling a gap between the plurality of image pickup chips bonded to the joined wafer with a sealing member;
a process of machining the joined wafer from a second main face side to reduce a thickness;
a process of forming an etching mask on the second main face;
a process of forming through-hole vias in the image pickup chips by using the etching mask;
a process of stripping the etching mask;
a process of forming an insulating layer that covers the second main face of the image pickup chips, a surface of the sealing member, and a wall face of the through-hole vias;
a process of forming through-hole interconnections, each of which is connected to each of the electrode pads via each of the through-hole vias;
a process of forming external connection electrodes, each of which is connected to each of the through-hole interconnections on the second main face; and
a process of cutting the joined wafer.
2. The method for producing an image pickup apparatus according to claim 1 , wherein image pickup chips determined as non-defective products by an inspection are bonded to the support substrate.
3. The method for producing an image pickup apparatus according to claim 2 , wherein the image pickup chips are bonded to the support substrate in a state in which a first alignment mark formed on the support substrate and a second alignment mark formed on the first main face of the image pickup chips are aligned with each other.
4. A method for producing a semiconductor apparatus comprising:
a process of fabricating a plurality of semiconductor chips by cutting a semiconductor chip substrate where a plurality of semiconductor circuit sections are formed on a first main face and electrode pads are formed around each of the semiconductor circuit sections;
a process of fabricating a joined wafer by bonding the first main face of each of the semiconductor chips to a support substrate via an adhesive layer;
a process of filling a gap between the plurality of semiconductor chips bonded to the joined wafer with a sealing member;
a process of machining the joined wafer from a second main face side to reduce a thickness;
a process of forming an etching mask on the second main face;
a process of forming through-hole vias in the semiconductor chips by using the etching mask;
a process of stripping the etching mask;
a process of forming an insulating layer that covers the second main face of the semiconductor chips, a surface of the sealing member, and a wall face of the through-hole vias;
a process of forming through-hole interconnections, each of which is connected to each of the electrode pads via each of the through-hole vias;
a process of forming external connection electrodes, each of which is connected to each of the through-hole interconnections on the second main face; and
a process of cutting the joined wafer.
5. The method for producing a semiconductor apparatus according to claim 4 , wherein the semiconductor chips determined as non-defective products by an inspection are bonded to the support substrate.
6. The method for producing a semiconductor apparatus according to claim 5 , including a process of forming a cover layer that covers the sealing member exposed on the second main face before the process of forming the etching mask.
7. The method for producing a semiconductor apparatus according to claim 6 , wherein in the process of stripping the etching mask, the etching mask in a region covering the sealing member is not stripped.
8. The method for producing a semiconductor apparatus according to claim 7 , wherein the support substrate and the adhesive layer are transparent.