Semiconductor device having penetrating electrodes each penetrating through substrate

1. A semiconductor device comprising:

a first semiconductor chip including a first internal circuit formed in a first semiconductor substrate; and

a first plurality of penetrating electrodes each penetrating through the first semiconductor substrate, wherein

the first plurality of penetrating electrodes includes a second plurality of penetrating electrodes arranged collinearly along a first line, the first line being a straight line,

the second plurality of penetrating electrodes includes a first penetrating electrode, a second penetrating electrode, a third penetrating electrode and a fourth penetrating electrode,

the first penetrating electrode and the second penetrating electrode are in a floating state without being electrically connected to the first internal circuit,

the third penetrating electrode is electrically connected to a first power supply line that conveys a first power supply potential to the first internal circuit,

the fourth penetrating electrode is electrically connected to a second power supply line that conveys a second power supply potential to the first internal circuit,

the third penetrating electrode and the fourth penetrating electrode are arranged between the first penetrating electrode and the second penetrating electrode, and

wherein the second plurality of penetrating electrodes further includes a fifth penetrating electrode arranged between the third penetrating electrode and the fourth penetrating electrode, the fifth penetrating electrode being in the floating state without being electrically connected to the first internal circuit, the second power supply potential being different from the first power supply potential.

2. The semiconductor device as claimed in claim 1 , wherein the first penetrating electrode is arranged closest to a first side of the first semiconductor chip, among the second plurality of penetrating electrodes arranged along the first line.

3. The semiconductor device as claimed in claim 1 , wherein

the first penetrating electrode and the third penetrating electrode are arranged adjacent to each other,

the second penetrating electrode and the fourth penetrating electrode are arranged adjacent to each other,

a first distance between the third penetrating electrode and the fourth penetrating electrode is wider than a second distance between the first penetrating electrode and the third penetrating electrode, and

the first distance is wider than a third distance between the second penetrating electrode and the fourth penetrating electrode.

4. The semiconductor device as claimed in claim 1 , wherein

the first plurality of penetrating electrodes further includes a third plurality of penetrating electrodes arranged along a second line that is parallel to the first line,

the third plurality of penetrating electrodes includes a sixth penetrating electrode and a seventh penetrating electrode,

the sixth penetrating electrode is electrically connected to the first power supply line,

the seventh penetrating electrode is electrically connected to the second power supply line,

the third penetrating electrode and the sixth penetrating electrode are arranged adjacent to each other, and

the fourth penetrating electrode and the seventh penetrating electrode are arranged adjacent to each other.

5. The semiconductor device as claimed in claim 4 , wherein

the third plurality of penetrating electrodes further includes an eighth penetrating electrode and a ninth penetrating electrode arranged along the second line,

the sixth penetrating electrode and the seventh penetrating electrode are arranged between the eighth penetrating electrode and the ninth penetrating electrode, and

the eighth penetrating electrode is arranged closest to the first side of the first semiconductor chip, among the third plurality of penetrating electrodes arranged along the second line.

6. The semiconductor device as claimed in claim 4 , wherein no penetrating electrode is disposed between the sixth penetrating electrode and the seventh penetrating electrode such that the sixth penetrating electrode and the seventh penetrating electrode are adjacent to each other.

7. The semiconductor device as claimed in claim 1 , further comprising:

a second semiconductor chip stacked over the first semiconductor chip, the second semiconductor chip including a second internal circuit formed in a second semiconductor substrate and a fourth plurality of penetrating electrodes each penetrating through the second semiconductor substrate, wherein

the fourth plurality of penetrating electrodes of the second semiconductor chip includes a tenth penetrating electrode, an eleventh penetrating electrode, a twelfth penetrating electrode, and a thirteenth penetrating electrode that are vertically aligned with the first penetrating electrode, the second penetrating electrode, the third penetrating electrode, and the fourth penetrating electrode, respectively,

the tenth penetrating electrode and the eleventh penetrating electrode are in the floating state without being electrically connected to the second internal circuit,

the twelfth penetrating electrode is electrically connected to a third power supply line that conveys the first power supply potential to the second internal circuit of the second semiconductor chip,

the thirteenth penetrating electrode is electrically connected to a fourth power supply line that conveys the second power supply potential to the second internal circuit of the second semiconductor chip, and

the twelfth penetrating electrode and the thirteenth penetrating electrode are electrically connected to the third penetrating electrode and the fourth penetrating electrode, respectively.

8. The semiconductor device as claimed in claim 7 , wherein the tenth penetrating electrode and the eleventh penetrating electrode are not electrically connected to the first penetrating electrode and the second penetrating electrode, respectively.