Semiconductor device having impedance calibration function to data output buffer and semiconductor module having the same

1. A method for calibrating an output buffer, the method comprising:

adjusting a first impedance code applied to a first plurality of first transistor units connected in parallel between a calibration terminal and a first power supply potential so that the potential on the calibration terminal substantially equals a reference potential;

applying the first impedance code to a second plurality of first transistor units connected in parallel between a node and the first power supply potential;

adjusting a second impedance code applied to a second transistor unit connected between the node and a second power supply potential so that the potential on the node substantially equals the reference potential;

applying the first impedance code to a third plurality of first transistor units connected in parallel between a data terminal and the first power supply potential; and

applying the second impedance code to a fourth plurality of second transistor units connected in parallel between the data terminal and the second power supply potential,

wherein each of the first transistor units comprises a plurality of transistors of a first conductivity type connected in parallel to each other,

each of the second transistor units comprises a plurality of transistors of a second conductivity type opposite the first conductivity type connected in parallel to each other, and

the calibration terminal is connected through a resistor to the second power supply potential.

2. The method as claimed in claim 1 , wherein the second plurality is equal in number to the first plurality.

3. The method as claimed in claim 1 , wherein each of the first plurality of first transistor units and the second transistor unit are adjusted to have a resistance equal to the resistor.

4. The method as claimed in claim 1 , wherein the reference potential is equal to the difference between the second power supply potential and the first power supply potential divided by 1 plus the first plurality, plus the first potential.

5. The method as claimed in claim 4 , wherein the first power supply potential comprises VDDQ, the second power supply potential comprises ground, the first plurality is 4, and the reference potential is equal to 0.8 VDDQ.

6. The method as claimed in claim 1 , wherein the first power supply potential is VDDQ and the second power supply potential is ground.

7. The method as claimed in claim 1 , wherein the first transistor units and the second transistor units comprise a resistor in series with the plurality of transistors.

8. The method as claimed in claim 1 , wherein the first impedance code is applied to the third plurality of first transistor units through first gates and the second impedance code is applied to the fourth plurality of second transistor units through second gates, the first and second gates each including a data input.

9. The method as claimed in claim 8 , wherein the first gates comprises OR gates and the second gate comprises AND gates.

10. The method as claimed in claim 1 , wherein the first transistor units and the second transistor units each comprise one transistor not controlled by respective first and second impedance codes.

11. The method as claimed in claim 1 , wherein the first impedance code is generated by a first counter and the second impedance code is generated by a second counter.

12. The method as claimed in claim 11 , wherein the first counter counts up or down until the potential on the calibration terminal and reference potential are reversed alternately and the second counter counts up or down until the potential on the node and reference potential are reversed alternately.