SAV using selective SAQP/SADP

1. A method of comprising:

providing on a titanium nitride (TiN) layer and dielectric layers alternating mandrels and non-mandrel fillers, spacers therebetween, and a metal cut plug through a mandrel or a non-mandrel filler;

removing a non-mandrel filler through a first self-aligned via (SAV) patterning stack having an opening over the non-mandrel filler and adjacent spacers, forming a first trench;

removing a mandrel through a second SAV patterning stack having an opening over the mandrel and adjacent spacers, forming a second trench;

etching the first and second trenches through the TiN and dielectric layers;

forming first and second plugs in the first and second trenches;

removing the mandrels and non-mandrel fillers, forming third trenches;

etching the third trenches through the TiN layer;

removing the metal cut plug and spacers and etching the third trenches into the dielectric layer;

removing the first and second plugs; and

filling the first, second and third trenches with metal.

2. The method according to claim 1 , wherein the mandrels and the non-mandrel fillers comprise different materials.

3. The method according to claim 2 , wherein the mandrels comprise amorphous silicon (a-Si) and the non-mandrel fillers comprise titanium oxide (TiO x ).

4. The method according to claim 1 , wherein the opening in the first SAV stack is further over half of each adjacent mandrel and the opening in the second SAV stack is further over half of each adjacent non-mandrel filler.

5. The method according to claim 1 , comprising:

removing the first SAV stack subsequent to etching the first trench through the TiN layer and prior to forming the second SAV stack; and

removing the second SAV stack subsequent to etching the second trench through the TiN layer and prior to etching the first and second trenches through the dielectric layers.

6. The method according to claim 1 , wherein the dielectric layers comprise a layer of tetraethyl orthosilicate (TEOS) formed over an ultra-low k (ULK) layer.

7. The method according to claim 1 , wherein the metal cut plug and spacers comprise silicon oxide (SiO 2 ).

8. A method of comprising:

providing on a titanium nitride (TiN) layer and dielectric layers alternating mandrels and non-mandrel fillers, spacers therebetween, and a metal cut plug through a mandrel or a non-mandrel filler;

removing a mandrel filler through a first self-aligned via (SAV) patterning stack having an opening over the mandrel and adjacent spacers, forming a first trench;

etching the first trench through the TiN layer;

removing a non-mandrel filler through a second SAV patterning stack having an opening over a non-mandrel filler and adjacent spacers, forming a second trench;

etching the second trench through the TiN layer;

etching the first and second trenches through the dielectric layers;

forming first and second plugs in the first and second trenches;

removing the mandrels and non-mandrel fillers, forming third trenches;

etching the third trenches through the TiN layer;

removing the metal cut plug and spacers and etching the third trenches into the dielectric layer;

removing the first and second plugs; and

filling the first, second and third trenches with metal.

9. The method according to claim 8 , wherein the mandrels and the non-mandrel fillers comprise different materials.

10. The method according to claim 9 , wherein the mandrel comprises amorphous silicon (a-Si) and the non-mandrel comprises titanium oxide (TiO x ).

11. The method according to claim 8 , wherein the opening in the first SAV stack is further over half of each adjacent mandrel and the opening in the second SAV stack is further over half of each adjacent non-mandrel filler.

12. The method according to claim 8 , comprising:

removing the first SAV stack prior to forming the second SAV stack; and

removing the second SAV stack prior to etching the first and second trenches through the dielectric layers.

13. The method according to claim 8 , wherein the dielectric layers comprise a layer of tetraethyl orthosilicate (TEOS) formed over an ultra-low k (ULK) layer.

14. The method according to claim 8 , wherein the metal cut plug and spacers comprise silicon oxide (SiO 2 ).

15. A method of comprising:

providing on a titanium nitride (TiN) layer and dielectric layers alternating mandrels of amorphous silicon (a-Si) and non-mandrel fillers of titanium oxide (TiO x ), spacers therebetween, and a metal plug through a mandrel or a non-mandrel filler;

removing either a non-mandrel filler or a mandrel through a first self-aligned (SAV) patterning stack having an opening over the non-mandrel filler or mandrel, respectively, and adjacent spacers, forming a first trench;

etching the first trench through the TiN layer;

removing either a mandrel or a non-mandrel filler through a second SAV patterning stack having an opening over the mandrel or the mandrel, respectively, and adjacent spacers, forming a second trench;

etching the second trench through the TiN layer;

etching the first and second trenches through the dielectric layers;

forming first and second plugs in the first and second trenches;

removing the mandrels and non-mandrel fillers, forming third trenches;

etching the third trenches through the TiN layer;

removing the metal cut plug and spacers and etching the third trenches into the dielectric layer;

removing the first and second plugs;

forming a metal layer over the dielectric and TiN layers, filling the first, second, and third trenches; and

planarizing the metal layer down to the TiN layer.

16. The method according to claim 15 , wherein the opening in the first SAV stack is over a mandrel or a non-mandrel filler and the opening in the second SAV stack is over the other of a mandrel or a non-mandrel filler.

17. The method according to claim 15 , wherein the opening in the first SAV stack is further over half of each adjacent mandrel or non-mandrel filler, respectively, and the opening in the second SAV stack is further over half of each adjacent non-mandrel filler or mandrel, respectively.

18. The method according to claim 15 , comprising:

removing the first SAV stack prior to forming the second SAV stack; and

removing the second SAV stack prior to etching the first and second trenches through the dielectric layers.

19. The method according to claim 15 , wherein the dielectric layers comprise a layer of tetraethyl orthosilicate (TEOS) formed over an ultra-low k (ULK) layer.

20. The method according to claim 15 , wherein the metal cut plug and spacers comprise silicon oxide (SiO 2 ).