IP Library › Granted Patent US 9,570,405
Granted Patent B2
US 9,570,405 · App. 14/768,818 · Granted Feb 14, 2017

Semiconductor device and method for manufacturing same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,570,405
App. No.
14/768,818
Filed
Aug 19, 2015
Granted
Feb 14, 2017
Kind
B2
Art Unit
2814
USPC
257/777
Abstract

One semiconductor device includes a wiring substrate, a semiconductor chip layered on one face of the wiring substrate and having a first face facing the wiring substrate and a second face positioned on a reverse side from the first face, a circuit being formed on at least the second face, a non-circuit-incorporating chip in which a circuit is not formed, the non-circuit-incorporating chip being layered on the second face of the semiconductor chip, and a sealing resin disposed between at least the wiring substrate and the non-circuit-incorporating chip.

Claims (34)

1. A semiconductor device comprising:

a wiring substrate;

a semiconductor chip which is stacked on one surface of the wiring substrate, has a first surface facing the wiring substrate and a second surface located on the opposite side to the first surface, and on at least the second surface of which a circuit is formed;

a chip without a built-in circuit, on which a circuit is not formed and which is stacked on the second surface of the semiconductor chip; and

a sealing resin disposed at least between the wiring substrate and the chip without a built-in circuit.

2. A semiconductor device comprising:

a wiring substrate;

a semiconductor chip which is stacked on one surface of the wiring substrate, has a first surface facing the wiring substrate and a second surface located on the opposite side to the first surface, and on at least the second surface of which a circuit is formed;

a chip without a built-in circuit, on which a circuit is not formed and which is stacked on the second surface of the semiconductor chip;

a sealing resin disposed at least between the wiring substrate and the chip without a built-in circuit; and

a marking formed at the surface of the chip without a built-in circuit or at the surface of the sealing resin, in a location overlapping the second surface of the semiconductor chip as seen in a plan view.

3. The semiconductor device as claimed in claim 1 , wherein a plurality of the semiconductor chips are stacked on the one surface of the wiring substrate, and the chip without a built-in circuit is stacked on the second surface of the outermost semiconductor chip from among the stacked semiconductor chips, located furthest from the wiring substrate.

4. A semiconductor device comprising:

a wiring substrate;

a semiconductor chip which is stacked on one surface of the wiring substrate, has a first surface facing the wiring substrate and a second surface located on the opposite side to the first surface, and on at least the second surface of which a circuit is formed;

a chip without a built-in circuit, on which a circuit is not formed and which is stacked on the second surface of the semiconductor chip;

a sealing resin disposed at least between the wiring substrate and the chip without a built-in circuit; and

a conducting wire which connects an electrode pad provided on the semiconductor chip to a connection pad provided on the wiring substrate.

5. The semiconductor device as claimed in claim 4 , wherein the chip without a built-in circuit is secured to the second surface of the semiconductor chip by means of an adhesive member, and a portion of the conducting wire is embedded in the adhesive member.

6. The semiconductor device as claimed in claim 4 , wherein a plurality of the semiconductor chips are stacked on the one surface of the wiring substrate, the chip without a built-in circuit is stacked on the second surface of the outermost semiconductor chip from among the stacked semiconductor chips, located furthest from the wiring substrate, and the conducting wire connects at least the electrode pad on the outermost semiconductor chip to the connection pad on the wiring substrate.

7. The semiconductor device as claimed in claim 4 , further comprising a marking formed at the surface of the chip without a built-in circuit or at the surface of the sealing resin, in a location overlapping the semiconductor chip as seen in a plan view.

8. The semiconductor device as claimed in claim 2 , wherein the sealing resin is provided in such a way as to cover in a planar manner the chip without a built-in circuit, and the marking is formed on a part of the sealing resin that covers the chip without a built-in circuit.

9. The semiconductor device as claimed in claim 2 , wherein the sealing resin is provided in a location other than a location overlapping, in a planar manner, the chip without a built-in circuit, and the marking is formed on the chip without a built-in circuit.

10. The semiconductor device as claimed in claim 2 , wherein the marking is formed by means of a recessed portion provided in the surface of the chip without a built-in circuit or in the surface of the sealing resin.

11. The semiconductor device as claimed in claim 1 , wherein the chip without a built-in circuit covers the semiconductor chip as seen in a plan view.

12. The semiconductor device as claimed in claim 1 , wherein the chip without a built-in circuit is a mirror chip having a surface which reflects light.

13. A method of manufacturing a semiconductor device, comprising:

stacking one or a plurality of semiconductor chips on one surface of a wiring substrate;

stacking a chip without a built-in circuit, on which a circuit is not formed, on the semiconductor chip which is stacked on the one surface of the wiring substrate; and

supplying and curing a sealing resin at least between the wiring substrate and the chip without a built-in circuit.

14. The method of manufacturing a semiconductor device as claimed in claim 13 , wherein, supplying and curing the sealing resin comprises supplying and curing the sealing resin in a location covering the chip without a built-in circuit, and the method further comprises forming a marking on a part of the sealing resin that covers the chip without a built-in circuit.

15. The method of manufacturing a semiconductor device as claimed in claim 13 , wherein, supplying and curing the sealing resin comprises supplying and curing the sealing resin in a location other than a location covering the chip without a built-in circuit, and the method further comprises forming a marking on the chip without a built-in circuit.

16. The method of manufacturing a semiconductor device as claimed in claim 14 , wherein, forming the marking comprises radiating a laser at the surface of the chip without a built-in circuit or at the surface of the sealing resin to remove parts of said surface.

17. The method of manufacturing a semiconductor device as claimed in claim 13 , further comprising, prior to stacking the chip without a built-in circuit, connecting, by means of a conducting wire, an electrode pad provided on the semiconductor chip to a connection pad provided on the wiring substrate.